Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs

Asen Asenov, G Slavcheva, Andrew R. Brown, John H. Davies, Subhash Saini

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Citations (Scopus)

Abstract

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effect, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.
Original languageEnglish
Title of host publicationIEDM '99 Technical Digest: International Electron Devices Meeting, 1999
PublisherIEEE
Pages535-558
ISBN (Print)0780354109
Publication statusPublished - 1999
EventInternational Electron Devices Meeting 1999 (IEDM'99) - Washington, DC, USA United States
Duration: 5 Dec 19998 Dec 1999

Conference

ConferenceInternational Electron Devices Meeting 1999 (IEDM'99)
CountryUSA United States
CityWashington, DC
Period5/12/998/12/99

Fingerprint

threshold voltage
field effect transistors
augmentation
inversions
valleys
formalism
gradients
simulation

Cite this

Asenov, A., Slavcheva, G., Brown, A. R., Davies, J. H., & Saini, S. (1999). Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. In IEDM '99 Technical Digest: International Electron Devices Meeting, 1999 (pp. 535-558 ). IEEE.

Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. / Asenov, Asen ; Slavcheva, G; Brown, Andrew R.; Davies, John H.; Saini, Subhash.

IEDM '99 Technical Digest: International Electron Devices Meeting, 1999 . IEEE, 1999. p. 535-558 .

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Asenov, A, Slavcheva, G, Brown, AR, Davies, JH & Saini, S 1999, Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. in IEDM '99 Technical Digest: International Electron Devices Meeting, 1999 . IEEE, pp. 535-558 , International Electron Devices Meeting 1999 (IEDM'99), Washington, DC, USA United States, 5/12/99.
Asenov A, Slavcheva G, Brown AR, Davies JH, Saini S. Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. In IEDM '99 Technical Digest: International Electron Devices Meeting, 1999 . IEEE. 1999. p. 535-558
Asenov, Asen ; Slavcheva, G ; Brown, Andrew R. ; Davies, John H. ; Saini, Subhash. / Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. IEDM '99 Technical Digest: International Electron Devices Meeting, 1999 . IEEE, 1999. pp. 535-558
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