Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs

Asen Asenov, G Slavcheva, Andrew R. Brown, John H. Davies

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
Publication statusPublished - 1999
Event3rd NASA Workshop on Device Modelling - NASA Ames Research Center, Moffet Field, California, USA United States
Duration: 26 Aug 199927 Aug 1999

Conference

Conference3rd NASA Workshop on Device Modelling
CountryUSA United States
CityNASA Ames Research Center, Moffet Field, California
Period26/08/9927/08/99

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