Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs

Asen Asenov, G Slavcheva, Andrew R. Brown, John H. Davies

Research output: Contribution to conference › Paper › peer-review

Original language	English
Publication status	Published - 1999
Event	3rd NASA Workshop on Device Modelling - NASA Ames Research Center, Moffet Field, California, USA United States Duration: 26 Aug 1999 → 27 Aug 1999

Conference	3rd NASA Workshop on Device Modelling
Country/Territory	USA United States
City	NASA Ames Research Center, Moffet Field, California
Period	26/08/99 → 27/08/99

Cite this

Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. / Asenov, Asen ; Slavcheva, G; Brown, Andrew R. et al.
1999. Paper presented at 3rd NASA Workshop on Device Modelling, NASA Ames Research Center, Moffet Field, California, USA United States.

Research output: Contribution to conference › Paper › peer-review

@conference{94986247d5c44affa9ea6f9acb00f451,

title = "Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs",

author = "Asen Asenov and G Slavcheva and Brown, \{Andrew R.\} and Davies, \{John H.\}",

year = "1999",

language = "English",

note = "3rd NASA Workshop on Device Modelling ; Conference date: 26-08-1999 Through 27-08-1999",

}