Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs

Asen Asenov, G Slavcheva, Andrew R. Brown, John H. Davies

Research output: Contribution to conferencePaper

Original languageEnglish
Publication statusPublished - 1999
Event3rd NASA Workshop on Device Modelling - NASA Ames Research Center, Moffet Field, California, USA United States
Duration: 26 Aug 199927 Aug 1999

Conference

Conference3rd NASA Workshop on Device Modelling
CountryUSA United States
CityNASA Ames Research Center, Moffet Field, California
Period26/08/9927/08/99

Cite this

Asenov, A., Slavcheva, G., Brown, A. R., & Davies, J. H. (1999). Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. Paper presented at 3rd NASA Workshop on Device Modelling, NASA Ames Research Center, Moffet Field, California, USA United States.

Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. / Asenov, Asen ; Slavcheva, G; Brown, Andrew R.; Davies, John H.

1999. Paper presented at 3rd NASA Workshop on Device Modelling, NASA Ames Research Center, Moffet Field, California, USA United States.

Research output: Contribution to conferencePaper

Asenov, A, Slavcheva, G, Brown, AR & Davies, JH 1999, 'Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs' Paper presented at 3rd NASA Workshop on Device Modelling, NASA Ames Research Center, Moffet Field, California, USA United States, 26/08/99 - 27/08/99, .
Asenov A, Slavcheva G, Brown AR, Davies JH. Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. 1999. Paper presented at 3rd NASA Workshop on Device Modelling, NASA Ames Research Center, Moffet Field, California, USA United States.
Asenov, Asen ; Slavcheva, G ; Brown, Andrew R. ; Davies, John H. / Quantum mechanical enhancement of random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. Paper presented at 3rd NASA Workshop on Device Modelling, NASA Ames Research Center, Moffet Field, California, USA United States.
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PY - 1999

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