Quantum corrections to the ‘Atomistic’ MOSFET simulations

Asen Asenov, G Slavcheva, Savas Kaya, R Balasubramaniam

Research output: Contribution to journalArticlepeer-review

4 Citations (SciVal)


We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D ’atomistic’ MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.
Original languageEnglish
Pages (from-to)15-21
JournalVLSI Design
Publication statusPublished - 2001


Dive into the research topics of 'Quantum corrections to the ‘Atomistic’ MOSFET simulations'. Together they form a unique fingerprint.

Cite this