Quantitative simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire

Chaowang Liu; Ian M. Watson

doi:10.1088/0268-1242/22/6/008

Quantitative simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire

Chaowang Liu, Ian M. Watson

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Citations (SciVal)

Original language	English
Pages (from-to)	629-635
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	22
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/22/6/008
Publication status	Published - 1 Jun 2007

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ID number: ISI:000247046900008

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title = "Quantitative simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire",

author = "Chaowang Liu and Watson, {Ian M.}",

note = "ID number: ISI:000247046900008",

year = "2007",

month = jun,

day = "1",

doi = "10.1088/0268-1242/22/6/008",

language = "English",

volume = "22",

pages = "629--635",

journal = "Semiconductor Science and Technology",

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T1 - Quantitative simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire

AU - Liu, Chaowang

AU - Watson, Ian M.

N1 - ID number: ISI:000247046900008

PY - 2007/6/1

Y1 - 2007/6/1

UR - http://dx.doi.org/10.1088/0268-1242/22/6/008

U2 - 10.1088/0268-1242/22/6/008

DO - 10.1088/0268-1242/22/6/008

M3 - Article

SN - 0268-1242

VL - 22

SP - 629

EP - 635

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

Quantitative simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire

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