Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

J. Priesol, A. Šatka, F. Uherek, D. Donoval, P. Shields, D.W.E. Allsopp

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, cathodoluminescence from InGaN/GaN single quantum wells grown on the facets of the GaN nano-pyramids has been quantitatively studied by Monte Carlo method. The influence of primary electron beam energy and the nanopyramid angle on generation of electron-hole pairs in individual parts of nanostructure has been studied by Monte Carlo simulations. The evolution of the GaN- and InGaN-related cathodoluminescence spectral lines with primary electron beam energy and angle of incidence has been assessed from the recombination rates in individual parts of the structure and compared with cathodoluminescence spectra measured at various beam energies. The possibility to determine the diffusion length of generated carriers in the structures like InGaN/GaN quantum wells using developed Monte Carlo simulator and CL measurements has been demonstrated.
Original languageEnglish
Pages (from-to)155-160
JournalApplied Surface Science
Volume269
Early online date7 Oct 2012
DOIs
Publication statusPublished - 15 Mar 2013

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Cathodoluminescence
Monte Carlo methods
Semiconductor quantum wells
Electron beams
Chemical analysis
Nanostructures
Simulators
Electrons

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Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method. / Priesol, J.; Šatka, A.; Uherek, F.; Donoval, D.; Shields, P.; Allsopp, D.W.E.

In: Applied Surface Science, Vol. 269, 15.03.2013, p. 155-160.

Research output: Contribution to journalArticle

Priesol, J. ; Šatka, A. ; Uherek, F. ; Donoval, D. ; Shields, P. ; Allsopp, D.W.E. / Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method. In: Applied Surface Science. 2013 ; Vol. 269. pp. 155-160.
@article{18dc8c782ad3485d84685e996d252ff7,
title = "Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method",
abstract = "In this paper, cathodoluminescence from InGaN/GaN single quantum wells grown on the facets of the GaN nano-pyramids has been quantitatively studied by Monte Carlo method. The influence of primary electron beam energy and the nanopyramid angle on generation of electron-hole pairs in individual parts of nanostructure has been studied by Monte Carlo simulations. The evolution of the GaN- and InGaN-related cathodoluminescence spectral lines with primary electron beam energy and angle of incidence has been assessed from the recombination rates in individual parts of the structure and compared with cathodoluminescence spectra measured at various beam energies. The possibility to determine the diffusion length of generated carriers in the structures like InGaN/GaN quantum wells using developed Monte Carlo simulator and CL measurements has been demonstrated.",
author = "J. Priesol and A. Šatka and F. Uherek and D. Donoval and P. Shields and D.W.E. Allsopp",
year = "2013",
month = "3",
day = "15",
doi = "10.1016/j.apsusc.2012.09.158",
language = "English",
volume = "269",
pages = "155--160",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

AU - Priesol, J.

AU - Šatka, A.

AU - Uherek, F.

AU - Donoval, D.

AU - Shields, P.

AU - Allsopp, D.W.E.

PY - 2013/3/15

Y1 - 2013/3/15

N2 - In this paper, cathodoluminescence from InGaN/GaN single quantum wells grown on the facets of the GaN nano-pyramids has been quantitatively studied by Monte Carlo method. The influence of primary electron beam energy and the nanopyramid angle on generation of electron-hole pairs in individual parts of nanostructure has been studied by Monte Carlo simulations. The evolution of the GaN- and InGaN-related cathodoluminescence spectral lines with primary electron beam energy and angle of incidence has been assessed from the recombination rates in individual parts of the structure and compared with cathodoluminescence spectra measured at various beam energies. The possibility to determine the diffusion length of generated carriers in the structures like InGaN/GaN quantum wells using developed Monte Carlo simulator and CL measurements has been demonstrated.

AB - In this paper, cathodoluminescence from InGaN/GaN single quantum wells grown on the facets of the GaN nano-pyramids has been quantitatively studied by Monte Carlo method. The influence of primary electron beam energy and the nanopyramid angle on generation of electron-hole pairs in individual parts of nanostructure has been studied by Monte Carlo simulations. The evolution of the GaN- and InGaN-related cathodoluminescence spectral lines with primary electron beam energy and angle of incidence has been assessed from the recombination rates in individual parts of the structure and compared with cathodoluminescence spectra measured at various beam energies. The possibility to determine the diffusion length of generated carriers in the structures like InGaN/GaN quantum wells using developed Monte Carlo simulator and CL measurements has been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84875417347&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1016/j.apsusc.2012.09.158

U2 - 10.1016/j.apsusc.2012.09.158

DO - 10.1016/j.apsusc.2012.09.158

M3 - Article

VL - 269

SP - 155

EP - 160

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -