Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

R.J. Nicholas; P.A. Shields; R.A. Child; L.J. Li; E. Alphandéry; N.J. Mason; C. Bumby

doi:10.1016/j.physe.2003.08.004

Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

R.J. Nicholas, P.A. Shields, R.A. Child, L.J. Li, E. Alphandéry, N.J. Mason, C. Bumby

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (SciVal)

Abstract

The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.

Original language	English
Pages (from-to)	204-210
Number of pages	7
Journal	Physica E: Low-dimensional Systems and Nanostructures
Volume	20
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physe.2003.08.004
Publication status	Published - 2004

Bibliographical note

Proceedings of the 11th International Conference on Narrow Gap; Buffalo, NY.; 16-20 June 2003

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10.1016/j.physe.2003.08.004

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title = "Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems",

abstract = "The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.",

author = "R.J. Nicholas and P.A. Shields and R.A. Child and L.J. Li and E. Alphand{\'e}ry and N.J. Mason and C. Bumby",

note = "Proceedings of the 11th International Conference on Narrow Gap; Buffalo, NY.; 16-20 June 2003",

year = "2004",

doi = "10.1016/j.physe.2003.08.004",

language = "English",

volume = "20",

pages = "204--210",

journal = "Physica E: Low-dimensional Systems and Nanostructures",

number = "3-4",

}

TY - JOUR

T1 - Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

AU - Nicholas, R.J.

AU - Shields, P.A.

AU - Child, R.A.

AU - Li, L.J.

AU - Alphandéry, E.

AU - Mason, N.J.

AU - Bumby, C.

N1 - Proceedings of the 11th International Conference on Narrow Gap; Buffalo, NY.; 16-20 June 2003

PY - 2004

Y1 - 2004

N2 - The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.

AB - The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.

UR - http://dx.doi.org/10.1016/j.physe.2003.08.004

UR - https://www.scopus.com/pages/publications/0347129561

U2 - 10.1016/j.physe.2003.08.004

DO - 10.1016/j.physe.2003.08.004

M3 - Article

VL - 20

SP - 204

EP - 210

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

IS - 3-4

ER -

Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

Abstract

Bibliographical note

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David Bullett Nanofabrication Facility

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Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

Abstract

Bibliographical note

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David Bullett Nanofabrication Facility

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