Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

R.J. Nicholas, P.A. Shields, R.A. Child, L.J. Li, E. Alphandéry, N.J. Mason, C. Bumby

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.
Original languageEnglish
Pages (from-to)204-210
Number of pages7
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume20
Issue number3-4
DOIs
Publication statusPublished - 2004

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