TY - JOUR
T1 - Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
AU - Nicholas, R.J.
AU - Shields, P.A.
AU - Child, R.A.
AU - Li, L.J.
AU - Alphandéry, E.
AU - Mason, N.J.
AU - Bumby, C.
N1 - Proceedings of the 11th International Conference on Narrow Gap; Buffalo, NY.; 16-20 June 2003
PY - 2004
Y1 - 2004
N2 - The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.
AB - The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.
UR - http://dx.doi.org/10.1016/j.physe.2003.08.004
U2 - 10.1016/j.physe.2003.08.004
DO - 10.1016/j.physe.2003.08.004
M3 - Article
VL - 20
SP - 204
EP - 210
JO - Physica E: Low-dimensional Systems and Nanostructures
JF - Physica E: Low-dimensional Systems and Nanostructures
IS - 3-4
ER -