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Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

  • M. G. Thompson
  • , C. Marinelli
  • , Y. Chu
  • , R. L. Sellin
  • , R. V. Penty
  • , I. H. White
  • , M. Van Der Poel
  • , D. Birkedal
  • , J. Hvam
  • , V. M. Ustinov
  • , M. Lämmlin
  • , D. Bimberg
  • University of Cambridge
  • Technical University of Denmark
  • Ioffe Institute
  • Technical University Berlin

Research output: Contribution to journal › Conference article › peer-review

23   Link opens in a new tab Citations (SciVal)

Abstract

Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.

Original languageEnglish
Pages (from-to)53-54
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
Publication statusPublished - 1 Dec 2004
EventConference Digest - 2004 IEEE 19th International Semiconductor Laser Conference - Matsue-shi, Japan
Duration: 21 Sept 2004 → 25 Sept 2004

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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