Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

M. G. Thompson, C. Marinelli, Y. Chu, R. L. Sellin, R. V. Penty, I. H. White, M. Van Der Poel, D. Birkedal, J. Hvam, V. M. Ustinov, M. Lämmlin, D. Bimberg

Research output: Contribution to journalConference article

18 Citations (Scopus)

Abstract

Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.

Original languageEnglish
Pages (from-to)53-54
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
Publication statusPublished - 1 Dec 2004
EventConference Digest - 2004 IEEE 19th International Semiconductor Laser Conference - Matsue-shi, Japan
Duration: 21 Sep 200425 Sep 2004

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Thompson, M. G., Marinelli, C., Chu, Y., Sellin, R. L., Penty, R. V., White, I. H., Van Der Poel, M., Birkedal, D., Hvam, J., Ustinov, V. M., Lämmlin, M., & Bimberg, D. (2004). Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers. Conference Digest - IEEE International Semiconductor Laser Conference, 53-54.