Abstract
Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.
Original language | English |
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Pages (from-to) | 53-54 |
Number of pages | 2 |
Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
Publication status | Published - 1 Dec 2004 |
Event | Conference Digest - 2004 IEEE 19th International Semiconductor Laser Conference - Matsue-shi, Japan Duration: 21 Sept 2004 → 25 Sept 2004 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering