Production of single-crystal semiconductor material using a nanostructure template

Wang-Nang Wang

Production of single-crystal semiconductor material using a nanostructure template

Department of Electronic & Electrical Engineering

Research output: Patent

Abstract

A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to from a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.

Original language	English
Patent number	TW200839041 (A)
IPC	C30B29/38,H01L21/30
Priority date	19/01/07
Publication status	Published - 1 Oct 2008

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@misc{6ca4402a163a44d59bc565589ce770e8,

title = "Production of single-crystal semiconductor material using a nanostructure template",

abstract = "A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to from a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.",

author = "Wang-Nang Wang",

year = "2008",

month = oct,

day = "1",

language = "English",

type = "Patent",

note = "TW200839041 (A); C30B29/38,H01L21/30",

}

TY - PAT

T1 - Production of single-crystal semiconductor material using a nanostructure template

AU - Wang, Wang-Nang

PY - 2008/10/1

Y1 - 2008/10/1

N2 - A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to from a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.

AB - A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to from a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.

UR - https://worldwide.espacenet.com/patent/search/family/037846656/publication/TW200839041A?q=pn%3DGB2445807A

M3 - Patent

M1 - TW200839041 (A)

ER -

Production of single-crystal semiconductor material using a nanostructure template

Abstract

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