Abstract
A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to from a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.
| Original language | English |
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| Patent number | TW200839041 (A) |
| IPC | C30B29/38,H01L21/30 |
| Priority date | 19/01/07 |
| Publication status | Published - 1 Oct 2008 |