Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

Y. H. Qian; M. Owen; A. C. Bryce; J. H. Marsh; C. D.W. Wilkinson; R. V. Penty; I. H. White; S. Perrin; D. Rogers; M. Robertson

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

Y. H. Qian
, M. Owen
, A. C. Bryce
, J. H. Marsh
, C. D.W. Wilkinson
, R. V. Penty
, I. H. White
, S. Perrin
, D. Rogers
, M. Robertson

University of Glasgow

Research output: Contribution to journal › Conference article › peer-review

9 Citations (SciVal)

Abstract

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm² device. A CH₄/H₂/O₂ RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF₆ dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

Original language	English
Pages (from-to)	103-106
Number of pages	4
Journal	International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1 Jan 1999
Event	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz Duration: 16 May 1999 → 20 May 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{e6d9d9ea1963467f927591b563654dd5,

title = "Process development on the monolithic fabrication of an ultra-compact 4{\texttimes}4 optical switch matrix on InP/InGaAsP material",

abstract = "We have fabricated an ultra-compact 4{\texttimes}4 optical matrix on InP/InGaAsP material. 1{\texttimes}4 MMI couplers and TIR mirrors are employed to produce a compact 1{\texttimes}2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.",

author = "Qian, \{Y. H.\} and M. Owen and Bryce, \{A. C.\} and Marsh, \{J. H.\} and Wilkinson, \{C. D.W.\} and Penty, \{R. V.\} and White, \{I. H.\} and S. Perrin and D. Rogers and M. Robertson",

year = "1999",

month = jan,

day = "1",

language = "English",

pages = "103--106",

journal = "International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "IEEE",

note = "Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 16-05-1999 Through 20-05-1999",

}

TY - JOUR

T1 - Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

AU - Qian, Y. H.

AU - Owen, M.

AU - Bryce, A. C.

AU - Marsh, J. H.

AU - Wilkinson, C. D.W.

AU - Penty, R. V.

AU - White, I. H.

AU - Perrin, S.

AU - Rogers, D.

AU - Robertson, M.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

AB - We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

UR - https://www.scopus.com/pages/publications/0032670453

M3 - Conference article

AN - SCOPUS:0032670453

SN - 1092-8669

SP - 103

EP - 106

JO - International Conference on Indium Phosphide and Related Materials

JF - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)

Y2 - 16 May 1999 through 20 May 1999

ER -

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

Abstract

ASJC Scopus subject areas

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