Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

Y. H. Qian, M. Owen, A. C. Bryce, J. H. Marsh, C. D.W. Wilkinson, R. V. Penty, I. H. White, S. Perrin, D. Rogers, M. Robertson

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

Original languageEnglish
Pages (from-to)103-106
Number of pages4
JournalInternational Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1 Jan 1999
EventProceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz
Duration: 16 May 199920 May 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material. / Qian, Y. H.; Owen, M.; Bryce, A. C.; Marsh, J. H.; Wilkinson, C. D.W.; Penty, R. V.; White, I. H.; Perrin, S.; Rogers, D.; Robertson, M.

In: International Conference on Indium Phosphide and Related Materials, 01.01.1999, p. 103-106.

Research output: Contribution to journalConference article

Qian, Y. H. ; Owen, M. ; Bryce, A. C. ; Marsh, J. H. ; Wilkinson, C. D.W. ; Penty, R. V. ; White, I. H. ; Perrin, S. ; Rogers, D. ; Robertson, M. / Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material. In: International Conference on Indium Phosphide and Related Materials. 1999 ; pp. 103-106.
@article{e6d9d9ea1963467f927591b563654dd5,
title = "Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material",
abstract = "We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.",
author = "Qian, {Y. H.} and M. Owen and Bryce, {A. C.} and Marsh, {J. H.} and Wilkinson, {C. D.W.} and Penty, {R. V.} and White, {I. H.} and S. Perrin and D. Rogers and M. Robertson",
year = "1999",
month = "1",
day = "1",
language = "English",
pages = "103--106",
journal = "International Conference on Indium Phosphide and Related Materials",
issn = "1092-8669",
publisher = "IEEE",

}

TY - JOUR

T1 - Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

AU - Qian, Y. H.

AU - Owen, M.

AU - Bryce, A. C.

AU - Marsh, J. H.

AU - Wilkinson, C. D.W.

AU - Penty, R. V.

AU - White, I. H.

AU - Perrin, S.

AU - Rogers, D.

AU - Robertson, M.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

AB - We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

UR - http://www.scopus.com/inward/record.url?scp=0032670453&partnerID=8YFLogxK

M3 - Conference article

SP - 103

EP - 106

JO - International Conference on Indium Phosphide and Related Materials

JF - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

ER -