Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

Y. H. Qian; M. Owen; A. C. Bryce; J. H. Marsh; C. D.W. Wilkinson; R. V. Penty; I. H. White; S. Perrin; D. Rogers; M. Robertson

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

Y. H. Qian, M. Owen, A. C. Bryce, J. H. Marsh, C. D.W. Wilkinson, R. V. Penty, I. H. White, S. Perrin, D. Rogers, M. Robertson

University of Glasgow

Research output: Contribution to journal › Conference article › peer-review

10 Citations (SciVal)

Abstract

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm² device. A CH₄/H₂/O₂ RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF₆ dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

Original language	English
Pages (from-to)	103-106
Number of pages	4
Journal	International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1 Jan 1999
Event	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz Duration: 16 May 1999 → 20 May 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{e6d9d9ea1963467f927591b563654dd5,

title = "Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material",

abstract = "We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.",

author = "Qian, {Y. H.} and M. Owen and Bryce, {A. C.} and Marsh, {J. H.} and Wilkinson, {C. D.W.} and Penty, {R. V.} and White, {I. H.} and S. Perrin and D. Rogers and M. Robertson",

year = "1999",

month = jan,

day = "1",

language = "English",

pages = "103--106",

journal = "International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "IEEE",

note = "Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 16-05-1999 Through 20-05-1999",

}

TY - JOUR

T1 - Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

AU - Qian, Y. H.

AU - Owen, M.

AU - Bryce, A. C.

AU - Marsh, J. H.

AU - Wilkinson, C. D.W.

AU - Penty, R. V.

AU - White, I. H.

AU - Perrin, S.

AU - Rogers, D.

AU - Robertson, M.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

AB - We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

UR - http://www.scopus.com/inward/record.url?scp=0032670453&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032670453

SN - 1092-8669

SP - 103

EP - 106

JO - International Conference on Indium Phosphide and Related Materials

JF - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)

Y2 - 16 May 1999 through 20 May 1999

ER -

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

Abstract

ASJC Scopus subject areas

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