Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

Y. H. Qian, M. Owen, A. C. Bryce, J. H. Marsh, C. D.W. Wilkinson, R. V. Penty, I. H. White, S. Perrin, D. Rogers, M. Robertson

Research output: Contribution to journalConference article

8 Citations (Scopus)


We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

Original languageEnglish
Pages (from-to)103-106
Number of pages4
JournalInternational Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1 Jan 1999
EventProceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz
Duration: 16 May 199920 May 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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