Pressure dependent relaxation in the photo-excited Mott insulator ETF2TCNQ: Influence of hopping and correlations on quasiparticle recombination rates

M. Mitrano, G. Cotugno, S. R. Clark, R. Singla, S. Kaiser, J. Staehler, R. Beyer, M. Dressel, L. Baldassarre, D. Nicoletti, A. Perucchi, T. Hasegawa, H. Okamoto, D. Jaksch, A. Cavalleri

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Abstract

Femtosecond relaxation of photo-excited quasiparticles in the one dimensional Mott insulator ET-F2TCNQ are measured as a function of external pressure, which is used to tune the electronic structure. By fitting the static optical properties and measuring femtosecond decay times at each pressure value, we correlate the relaxation rates with the electronic bandwidth t and on the intersite correlation energy V. The scaling of relaxation times with microscopic parameters is different than for metals and semiconductors. The competition between localization and delocalization of the Mott-Hubbard exciton dictates the efficiency of the decay, as exposed by a fit based on the solution of the time-dependent extended Hubbard Hamiltonian.
Original languageEnglish
Article number117801
Number of pages5
JournalPhysical Review Letters
Volume112
Issue number11
Early online date18 Mar 2014
DOIs
Publication statusPublished - 21 Mar 2014

Keywords

  • cond-mat.str-el

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    Mitrano, M., Cotugno, G., Clark, S. R., Singla, R., Kaiser, S., Staehler, J., Beyer, R., Dressel, M., Baldassarre, L., Nicoletti, D., Perucchi, A., Hasegawa, T., Okamoto, H., Jaksch, D., & Cavalleri, A. (2014). Pressure dependent relaxation in the photo-excited Mott insulator ETF2TCNQ: Influence of hopping and correlations on quasiparticle recombination rates. Physical Review Letters, 112(11), [117801]. https://doi.org/10.1103/PhysRevLett.112.117801