Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

P Harmer, M P Halsall, D Wolverson, P J Parbrook, S J Henley

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1 Citation (SciVal)

Original language	English
Pages (from-to)	L22-L24
Journal	Semiconductor Science and Technology
Volume	19
Issue number	3
Publication status	Published - 2004

ID number: ISI:000220420500004

Cite this

@article{e8ce78fb60e9457184b8a588f222a096,

title = "Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa",

author = "P Harmer and Halsall, {M P} and D Wolverson and Parbrook, {P J} and Henley, {S J}",

note = "ID number: ISI:000220420500004",

year = "2004",

language = "English",

volume = "19",

pages = "L22--L24",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

number = "3",

}

TY - JOUR

T1 - Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

AU - Harmer, P

AU - Halsall, M P

AU - Wolverson, D

AU - Parbrook, P J

AU - Henley, S J

N1 - ID number: ISI:000220420500004

PY - 2004

Y1 - 2004

M3 - Article

SN - 0268-1242

VL - 19

SP - L22-L24

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -