Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

P Harmer, M P Halsall, D Wolverson, P J Parbrook, S J Henley

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)L22-L24
JournalSemiconductor Science and Technology
Volume19
Issue number3
Publication statusPublished - 2004

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Harmer, P., Halsall, M. P., Wolverson, D., Parbrook, P. J., & Henley, S. J. (2004). Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa. Semiconductor Science and Technology, 19(3), L22-L24.