Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

Michael J Edwards, Emmanuel D Le Boulbar, S Vittoz, G Vanko, K Brinkfeldt, L Rufer, P Johander, T Lalinský, Christopher R Bowen, Duncan W E Allsopp

Research output: Contribution to journal › Article › peer-review

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