Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

Michael J Edwards, Emmanuel D Le Boulbar, S Vittoz, G Vanko, K Brinkfeldt, L Rufer, P Johander, T Lalinský, Christopher R Bowen, Duncan W E Allsopp

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Abstract

This paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 mm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pressure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm 2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in I DS when the pressure was increased from 0 to 60 bar. The response of six strategically placed HEMTs along the chip's surface, were compared to a finite element model to predict sensor behaviour.
LanguageEnglish
Pages960-963
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number3-4
DOIs
StatusPublished - Mar 2012

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high electron mobility transistors
pressure dependence
sapphire
membranes
temperature dependence
sensors
chips
pressure sensors

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Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane. / Edwards, Michael J; Le Boulbar, Emmanuel D; Vittoz, S; Vanko, G; Brinkfeldt, K; Rufer, L; Johander, P; Lalinský, T; Bowen, Christopher R; Allsopp, Duncan W E.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 3-4, 03.2012, p. 960-963.

Research output: Contribution to journalArticle

Edwards, Michael J ; Le Boulbar, Emmanuel D ; Vittoz, S ; Vanko, G ; Brinkfeldt, K ; Rufer, L ; Johander, P ; Lalinský, T ; Bowen, Christopher R ; Allsopp, Duncan W E. / Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2012 ; Vol. 9, No. 3-4. pp. 960-963
@article{9aed46f36042410882d8d5d080c8c48e,
title = "Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane",
abstract = "This paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 mm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pressure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm 2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in I DS when the pressure was increased from 0 to 60 bar. The response of six strategically placed HEMTs along the chip's surface, were compared to a finite element model to predict sensor behaviour.",
author = "Edwards, {Michael J} and {Le Boulbar}, {Emmanuel D} and S Vittoz and G Vanko and K Brinkfeldt and L Rufer and P Johander and T Lalinsk{\'y} and Bowen, {Christopher R} and Allsopp, {Duncan W E}",
year = "2012",
month = "3",
doi = "10.1002/pssc.201100371",
language = "English",
volume = "9",
pages = "960--963",
journal = "Physica Status Solidi (C)",
issn = "1610-1634",
publisher = "Wiley-VCH Verlag",
number = "3-4",

}

TY - JOUR

T1 - Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

AU - Edwards,Michael J

AU - Le Boulbar,Emmanuel D

AU - Vittoz,S

AU - Vanko,G

AU - Brinkfeldt,K

AU - Rufer,L

AU - Johander,P

AU - Lalinský,T

AU - Bowen,Christopher R

AU - Allsopp,Duncan W E

PY - 2012/3

Y1 - 2012/3

N2 - This paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 mm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pressure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm 2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in I DS when the pressure was increased from 0 to 60 bar. The response of six strategically placed HEMTs along the chip's surface, were compared to a finite element model to predict sensor behaviour.

AB - This paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 mm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pressure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm 2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in I DS when the pressure was increased from 0 to 60 bar. The response of six strategically placed HEMTs along the chip's surface, were compared to a finite element model to predict sensor behaviour.

UR - http://www.scopus.com/inward/record.url?scp=84858817183&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1002/pssc.201100371

U2 - 10.1002/pssc.201100371

DO - 10.1002/pssc.201100371

M3 - Article

VL - 9

SP - 960

EP - 963

JO - Physica Status Solidi (C)

T2 - Physica Status Solidi (C)

JF - Physica Status Solidi (C)

SN - 1610-1634

IS - 3-4

ER -