Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

Andrew Johnson; Stephen Richards; Troy D. Manning; Michael Hill; Kieran Molloy

doi:10.1002/ejic.201601419

Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

Andrew Johnson, Stephen Richards, Troy D. Manning, Michael Hill, Kieran Molloy

Research output: Contribution to journal › Article › peer-review

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Abstract

A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.

Original language	English
Pages (from-to)	1868-1876
Number of pages	9
Journal	European Journal of Inorganic Chemistry
Volume	2017
Issue number	13
DOIs	https://doi.org/10.1002/ejic.201601419
Publication status	Published - 3 Apr 2017

Keywords

Chemical vapor deposition
Thin films
Semiconductors
Nickel; Precursors

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10.1002/ejic.201601419

ejic.201601419 V2
This is the peer reviewed version of the following article: Johnson, A, Richards, S, Manning, TD, Hill, M & Molloy, K 2017, 'Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions' European Journal of Inorganic Chemistry, vol 2017, no. 13, pp. 1868-1876., which has been published in final form at DOI: 10.1002/ejic.201601419. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. http://www.interscience.wiley.com/
Accepted author manuscript, 1.99 MB

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Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions. / Johnson, Andrew; Richards, Stephen; Manning, Troy D.; Hill, Michael; Molloy, Kieran.

In: European Journal of Inorganic Chemistry, Vol. 2017, No. 13, 03.04.2017, p. 1868-1876.

Research output: Contribution to journal › Article › peer-review

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AU - Molloy, Kieran

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AB - A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.

KW - Chemical vapor deposition

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KW - Semiconductors

KW - Nickel; Precursors

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Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

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Keywords

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