Abstract
A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.
Original language | English |
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Pages (from-to) | 1868-1876 |
Number of pages | 9 |
Journal | European Journal of Inorganic Chemistry |
Volume | 2017 |
Issue number | 13 |
DOIs | |
Publication status | Published - 3 Apr 2017 |
Keywords
- Chemical vapor deposition
- Thin films
- Semiconductors
- Nickel; Precursors