Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

Andrew Johnson, Stephen Richards, Troy D. Manning, Michael Hill, Kieran Molloy

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.
LanguageEnglish
Pages1868-1876
Number of pages9
JournalEuropean Journal of Inorganic Chemistry
Volume2017
Issue number13
DOIs
StatusPublished - 3 Apr 2017

Fingerprint

Organic Chemicals
Atmospheric pressure
Oxide films
Chemical vapor deposition
Metals
Thin films
Nickel
Deposits
Derivatives
Glass
phenyllithium
nickel monoxide
indium tin oxide
N,N,N',N'-tetramethylethylenediamine

Keywords

  • Chemical vapor deposition
  • Thin films
  • Semiconductors
  • Nickel; Precursors

Cite this

Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions. / Johnson, Andrew; Richards, Stephen; Manning, Troy D.; Hill, Michael; Molloy, Kieran.

In: European Journal of Inorganic Chemistry, Vol. 2017, No. 13, 03.04.2017, p. 1868-1876.

Research output: Contribution to journal › Article

Johnson, A, Richards, S, Manning, TD, Hill, M & Molloy, K 2017, 'Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions', European Journal of Inorganic Chemistry, vol. 2017, no. 13, pp. 1868-1876. https://doi.org/10.1002/ejic.201601419
Johnson A, Richards S, Manning TD, Hill M, Molloy K. Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions. European Journal of Inorganic Chemistry. 2017 Apr 3;2017(13):1868-1876. https://doi.org/10.1002/ejic.201601419
Johnson, Andrew ; Richards, Stephen ; Manning, Troy D. ; Hill, Michael ; Molloy, Kieran. / Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions. In: European Journal of Inorganic Chemistry. 2017 ; Vol. 2017, No. 13. pp. 1868-1876.
@article{604f66f1aad34132b945db78a8196d5c,
title = "Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions",
abstract = "A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.",
keywords = "Chemical vapor deposition, Thin films, Semiconductors, Nickel; Precursors",
author = "Andrew Johnson and Stephen Richards and Manning, {Troy D.} and Michael Hill and Kieran Molloy",
year = "2017",
month = "4",
day = "3",
doi = "10.1002/ejic.201601419",
language = "English",
volume = "2017",
pages = "1868--1876",
journal = "European Journal of Inorganic Chemistry",
issn = "1434-1948",
publisher = "Wiley-VCH Verlag",
number = "13",

}

TY - JOUR

T1 - Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

AU - Johnson, Andrew

AU - Richards, Stephen

AU - Manning, Troy D.

AU - Hill, Michael

AU - Molloy, Kieran

PY - 2017/4/3

Y1 - 2017/4/3

N2 - A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.

AB - A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.

KW - Chemical vapor deposition

KW - Thin films

KW - Semiconductors

KW - Nickel; Precursors

U2 - 10.1002/ejic.201601419

DO - 10.1002/ejic.201601419

M3 - Article

VL - 2017

SP - 1868

EP - 1876

JO - European Journal of Inorganic Chemistry

T2 - European Journal of Inorganic Chemistry

JF - European Journal of Inorganic Chemistry

SN - 1434-1948

IS - 13

ER -

Access to Document

  • ejic.201601419 V2

    This is the peer reviewed version of the following article: Johnson, A, Richards, S, Manning, TD, Hill, M & Molloy, K 2017, 'Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions' European Journal of Inorganic Chemistry, vol 2017, no. 13, pp. 1868-1876., which has been published in final form at DOI: 10.1002/ejic.201601419. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. http://www.interscience.wiley.com/

    Accepted author manuscript, 1 MB