Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 1868-1876 |
| Number of pages | 9 |
| Journal | European Journal of Inorganic Chemistry |
| Volume | 2017 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 3 Apr 2017 |
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Keywords
- Chemical vapor deposition
- Thin films
- Semiconductors
- Nickel; Precursors
Cite this
Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions. / Johnson, Andrew; Richards, Stephen; Manning, Troy D.; Hill, Michael; Molloy, Kieran.
In: European Journal of Inorganic Chemistry, Vol. 2017, No. 13, 03.04.2017, p. 1868-1876.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions
AU - Johnson, Andrew
AU - Richards, Stephen
AU - Manning, Troy D.
AU - Hill, Michael
AU - Molloy, Kieran
PY - 2017/4/3
Y1 - 2017/4/3
N2 - A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.
AB - A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.
KW - Chemical vapor deposition
KW - Thin films
KW - Semiconductors
KW - Nickel; Precursors
U2 - 10.1002/ejic.201601419
DO - 10.1002/ejic.201601419
M3 - Article
VL - 2017
SP - 1868
EP - 1876
JO - European Journal of Inorganic Chemistry
JF - European Journal of Inorganic Chemistry
SN - 1434-1948
IS - 13
ER -