Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

Andrew Johnson, Stephen Richards, Troy D. Manning, Michael Hill, Kieran Molloy

Research output: Contribution to journalArticle

1 Citation (Scopus)
50 Downloads (Pure)

Abstract

A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.
Original languageEnglish
Pages (from-to)1868-1876
Number of pages9
JournalEuropean Journal of Inorganic Chemistry
Volume2017
Issue number13
DOIs
Publication statusPublished - 3 Apr 2017

    Fingerprint

Keywords

  • Chemical vapor deposition
  • Thin films
  • Semiconductors
  • Nickel; Precursors

Cite this