Potentiostatic electrodeposition of cuprous oxide thin films for photovoltaic applications

Wilman Septina; Shigeru Ikeda; M Alam Khan; Takeshi Hirai; Takashi Harada; Michio Matsumura; Laurence M Peter

doi:10.1016/j.electacta.2011.02.075

Potentiostatic electrodeposition of cuprous oxide thin films for photovoltaic applications

Wilman Septina, Shigeru Ikeda, M Alam Khan, Takeshi Hirai, Takashi Harada, Michio Matsumura, Laurence M Peter

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

111 Citations (SciVal)

Abstract

Potentiostatic deposition of Cu2O thin films on glass substrates coated with F-doped SnO2 from an alkaline electrolyte solution (pH 12.5) containing copper (II) sulfate and lactic acid was studied for fabrication of a Cu2O/Al-doped ZnO (AZO) heterojunction solar cell. The band gap of the electrodeposited Cu2O films was determined by photoelectrochemical measurements to be around 1.9 eV irrespective of the applied potentials. The solar cells with a glass/FTO/Cu2O/AZO structure were fabricated by sputtering an AZO film onto the Cu2O film followed by deposition of an Al contact by vacuum evaporation. The highest efficiency of 0.603% was obtained with a Cu2O film deposited at -0.6 V (vs. Ag/AgCl). This was attributed to better compactness and purity of the Cu2O film than those of the Cu2O films deposited at other potentials.

Original language	English
Pages (from-to)	4882-4888
Number of pages	7
Journal	Electrochimica Acta
Volume	56
Issue number	13
DOIs	https://doi.org/10.1016/j.electacta.2011.02.075
Publication status	Published - 1 May 2011

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SDG 7 Affordable and Clean Energy

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10.1016/j.electacta.2011.02.075

Cite this

@article{eebfd760df874bc0bc0ac9f4f129851d,

title = "Potentiostatic electrodeposition of cuprous oxide thin films for photovoltaic applications",

abstract = "Potentiostatic deposition of Cu2O thin films on glass substrates coated with F-doped SnO2 from an alkaline electrolyte solution (pH 12.5) containing copper (II) sulfate and lactic acid was studied for fabrication of a Cu2O/Al-doped ZnO (AZO) heterojunction solar cell. The band gap of the electrodeposited Cu2O films was determined by photoelectrochemical measurements to be around 1.9 eV irrespective of the applied potentials. The solar cells with a glass/FTO/Cu2O/AZO structure were fabricated by sputtering an AZO film onto the Cu2O film followed by deposition of an Al contact by vacuum evaporation. The highest efficiency of 0.603\% was obtained with a Cu2O film deposited at -0.6 V (vs. Ag/AgCl). This was attributed to better compactness and purity of the Cu2O film than those of the Cu2O films deposited at other potentials.",

author = "Wilman Septina and Shigeru Ikeda and Khan, \{M Alam\} and Takeshi Hirai and Takashi Harada and Michio Matsumura and Peter, \{Laurence M\}",

year = "2011",

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doi = "10.1016/j.electacta.2011.02.075",

language = "English",

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T1 - Potentiostatic electrodeposition of cuprous oxide thin films for photovoltaic applications

AU - Septina, Wilman

AU - Ikeda, Shigeru

AU - Khan, M Alam

AU - Hirai, Takeshi

AU - Harada, Takashi

AU - Matsumura, Michio

AU - Peter, Laurence M

PY - 2011/5/1

Y1 - 2011/5/1

N2 - Potentiostatic deposition of Cu2O thin films on glass substrates coated with F-doped SnO2 from an alkaline electrolyte solution (pH 12.5) containing copper (II) sulfate and lactic acid was studied for fabrication of a Cu2O/Al-doped ZnO (AZO) heterojunction solar cell. The band gap of the electrodeposited Cu2O films was determined by photoelectrochemical measurements to be around 1.9 eV irrespective of the applied potentials. The solar cells with a glass/FTO/Cu2O/AZO structure were fabricated by sputtering an AZO film onto the Cu2O film followed by deposition of an Al contact by vacuum evaporation. The highest efficiency of 0.603% was obtained with a Cu2O film deposited at -0.6 V (vs. Ag/AgCl). This was attributed to better compactness and purity of the Cu2O film than those of the Cu2O films deposited at other potentials.

AB - Potentiostatic deposition of Cu2O thin films on glass substrates coated with F-doped SnO2 from an alkaline electrolyte solution (pH 12.5) containing copper (II) sulfate and lactic acid was studied for fabrication of a Cu2O/Al-doped ZnO (AZO) heterojunction solar cell. The band gap of the electrodeposited Cu2O films was determined by photoelectrochemical measurements to be around 1.9 eV irrespective of the applied potentials. The solar cells with a glass/FTO/Cu2O/AZO structure were fabricated by sputtering an AZO film onto the Cu2O film followed by deposition of an Al contact by vacuum evaporation. The highest efficiency of 0.603% was obtained with a Cu2O film deposited at -0.6 V (vs. Ag/AgCl). This was attributed to better compactness and purity of the Cu2O film than those of the Cu2O films deposited at other potentials.

UR - https://www.scopus.com/pages/publications/79955809828

UR - http://dx.doi.org/10.1016/j.electacta.2011.02.075

U2 - 10.1016/j.electacta.2011.02.075

DO - 10.1016/j.electacta.2011.02.075

M3 - Article

SN - 0013-4686

VL - 56

SP - 4882

EP - 4888

JO - Electrochimica Acta

JF - Electrochimica Acta

IS - 13

ER -

Potentiostatic electrodeposition of cuprous oxide thin films for photovoltaic applications

Abstract

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