Potential tuning of porous silicon luminescence

E. A. Meulenkamp; L. M. Peter; D. J. Riley; R. I. Wielgosz; R. V. Penty; P. A. Snow; I. H. White

Potential tuning of porous silicon luminescence

E. A. Meulenkamp, L. M. Peter, D. J. Riley, R. I. Wielgosz, R. V. Penty, P. A. Snow, I. H. White

University of Bath

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.

Original language	English
Journal	IEE Colloquium (Digest)
Issue number	160
Publication status	Published - 1 Dec 1995
Event	IEE Colloquium on Materials for Displays - London, UK Duration: 3 Oct 1995 → 3 Oct 1995

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{fc3fdafb43d2497db7b78194b7ea923c,

title = "Potential tuning of porous silicon luminescence",

abstract = "Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.",

author = "Meulenkamp, {E. A.} and Peter, {L. M.} and Riley, {D. J.} and Wielgosz, {R. I.} and Penty, {R. V.} and Snow, {P. A.} and White, {I. H.}",

year = "1995",

month = dec,

day = "1",

language = "English",

journal = "IEE Colloquium (Digest)",

issn = "0963-3308",

publisher = "Institute of Electrical Engineers",

number = "160",

note = "IEE Colloquium on Materials for Displays ; Conference date: 03-10-1995 Through 03-10-1995",

}

TY - JOUR

T1 - Potential tuning of porous silicon luminescence

AU - Meulenkamp, E. A.

AU - Peter, L. M.

AU - Riley, D. J.

AU - Wielgosz, R. I.

AU - Penty, R. V.

AU - Snow, P. A.

AU - White, I. H.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.

AB - Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.

UR - http://www.scopus.com/inward/record.url?scp=0029532609&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029532609

SN - 0963-3308

JO - IEE Colloquium (Digest)

JF - IEE Colloquium (Digest)

IS - 160

T2 - IEE Colloquium on Materials for Displays

Y2 - 3 October 1995 through 3 October 1995

ER -

Potential tuning of porous silicon luminescence

Abstract

ASJC Scopus subject areas

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