Potential fluctuations due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures

G Slavcheva, Ivan Yanchev

Research output: Contribution to journalArticle

Abstract

A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening due to the image charge with respect to the metal electrode in MIS-structure is taken into account, introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential Γ2 to which it leads in distinction with the so far known correlation functions leading to divergent dispersion. The important characteristic of the random potential distribution Γ2 determining the amplitude of the potential fluctuations is calculated.
Original languageEnglish
Pages (from-to)439-441
JournalSolid State Communications
Volume79
Issue number5
DOIs
Publication statusPublished - Aug 1991

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