Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium

C. J. Edwardson, P. G. Coleman, H. A. W. El Mubarek

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The formation of FnV2 complexes, with n = 5 ± 1, near the end-of-range damage region in germanium implanted with 30 keV phosphorus and 40 keV fluorine ions, after annealing to 400 °C, has been observed using variable-energy positron annihilation spectroscopy in conjunction with secondary ion mass spectrometry. Phosphorus ions were implanted at 6 × 1013 and 1015, F at 1015 cm−2. Complexes—at lower concentrations—have also been observed at shallower depths in samples implanted with P at 1015 cm−2. The complexes break up and their components diffuse away at 450 and 500 °C for the higher and lower P dose samples, respectively.

Original languageEnglish
Article number035005
JournalSemiconductor Science and Technology
Volume29
Issue number3
DOIs
Publication statusPublished - Mar 2014

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