Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium

C. J. Edwardson, P. G. Coleman, H. A. W. El Mubarek

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The formation of FnV2 complexes, with n = 5 ± 1, near the end-of-range damage region in germanium implanted with 30 keV phosphorus and 40 keV fluorine ions, after annealing to 400 °C, has been observed using variable-energy positron annihilation spectroscopy in conjunction with secondary ion mass spectrometry. Phosphorus ions were implanted at 6 × 1013 and 1015, F at 1015 cm−2. Complexes—at lower concentrations—have also been observed at shallower depths in samples implanted with P at 1015 cm−2. The complexes break up and their components diffuse away at 450 and 500 °C for the higher and lower P dose samples, respectively.

Original languageEnglish
Article number035005
JournalSemiconductor Science and Technology
Volume29
Issue number3
DOIs
Publication statusPublished - Mar 2014

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Germanium
Positron annihilation
Fluorine
positron annihilation
Phosphorus
Vacancies
fluorine
phosphorus
germanium
Ions
Positron annihilation spectroscopy
Secondary ion mass spectrometry
secondary ion mass spectrometry
low concentrations
ions
Annealing
damage
dosage
annealing
spectroscopy

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Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium. / Edwardson, C. J.; Coleman, P. G.; El Mubarek, H. A. W.

In: Semiconductor Science and Technology, Vol. 29, No. 3, 035005, 03.2014.

Research output: Contribution to journalArticle

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