TY - JOUR
T1 - Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium
AU - Edwardson, C. J.
AU - Coleman, P. G.
AU - El Mubarek, H. A. W.
PY - 2014/3
Y1 - 2014/3
N2 - The formation of FnV2 complexes, with n = 5 ± 1, near the end-of-range damage region in germanium implanted with 30 keV phosphorus and 40 keV fluorine ions, after annealing to 400 °C, has been observed using variable-energy positron annihilation spectroscopy in conjunction with secondary ion mass spectrometry. Phosphorus ions were implanted at 6 × 1013 and 1015, F at 1015 cm−2. Complexes—at lower concentrations—have also been observed at shallower depths in samples implanted with P at 1015 cm−2. The complexes break up and their components diffuse away at 450 and 500 °C for the higher and lower P dose samples, respectively.
AB - The formation of FnV2 complexes, with n = 5 ± 1, near the end-of-range damage region in germanium implanted with 30 keV phosphorus and 40 keV fluorine ions, after annealing to 400 °C, has been observed using variable-energy positron annihilation spectroscopy in conjunction with secondary ion mass spectrometry. Phosphorus ions were implanted at 6 × 1013 and 1015, F at 1015 cm−2. Complexes—at lower concentrations—have also been observed at shallower depths in samples implanted with P at 1015 cm−2. The complexes break up and their components diffuse away at 450 and 500 °C for the higher and lower P dose samples, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84894246899&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1088/0268-1242/29/3/035005
U2 - 10.1088/0268-1242/29/3/035005
DO - 10.1088/0268-1242/29/3/035005
M3 - Article
AN - SCOPUS:84894246899
SN - 0268-1242
VL - 29
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 3
M1 - 035005
ER -