Porosity dependence of the acoustic longitudinal velocity inheavily doped P++ porous silicon layers

Gazimagomed N Aliev; Bernhard Goller; Dmitry Kovalev; Paul Snow

doi:10.1002/pssc.200881102

Porosity dependence of the acoustic longitudinal velocity inheavily doped P⁺⁺ porous silicon layers

Gazimagomed N Aliev
, Bernhard Goller
, Dmitry Kovalev
, Paul Snow

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (SciVal)

Abstract

The longitudinal acoustic velocity for 1 GHz waves propagating along the 100 direction in p⁺⁺ porous silicon layers has been measured using an acoustic wave transmission technique. The velocities obtained are significantly higher than those previously observed for p⁺ samples. The porosity dependence is measured to be V-L = 8.43 (1 - P)^0.58 km/s, where V-L is longitudinal velocity and P is porosity. The low value of the exponent (0.58) is an indication of a relatively well-ordered pore structure.

Original language	English
Pages (from-to)	1670-1674
Number of pages	5
Journal	Physica Status Solidi (C)
Volume	6
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200881102
Publication status	Published - Jul 2009
Event	6th International Conference on Porous Semiconductors Science and Technology - Mallorca, Spain Duration: 10 Mar 2008 → 14 Mar 2008

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10.1002/pssc.200881102

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@article{bf39090f25144a69a27061f9dd2c18a9,

title = "Porosity dependence of the acoustic longitudinal velocity inheavily doped P++ porous silicon layers",

abstract = "The longitudinal acoustic velocity for 1 GHz waves propagating along the 100 direction in p++ porous silicon layers has been measured using an acoustic wave transmission technique. The velocities obtained are significantly higher than those previously observed for p+ samples. The porosity dependence is measured to be V-L = 8.43 (1 - P)0.58 km/s, where V-L is longitudinal velocity and P is porosity. The low value of the exponent (0.58) is an indication of a relatively well-ordered pore structure.",

author = "Aliev, \{Gazimagomed N\} and Bernhard Goller and Dmitry Kovalev and Paul Snow",

year = "2009",

month = jul,

doi = "10.1002/pssc.200881102",

language = "English",

volume = "6",

pages = "1670--1674",

journal = "Physica Status Solidi (C)",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "6th International Conference on Porous Semiconductors Science and Technology ; Conference date: 10-03-2008 Through 14-03-2008",

}

TY - JOUR

T1 - Porosity dependence of the acoustic longitudinal velocity inheavily doped P++ porous silicon layers

AU - Aliev, Gazimagomed N

AU - Goller, Bernhard

AU - Kovalev, Dmitry

AU - Snow, Paul

PY - 2009/7

Y1 - 2009/7

N2 - The longitudinal acoustic velocity for 1 GHz waves propagating along the 100 direction in p++ porous silicon layers has been measured using an acoustic wave transmission technique. The velocities obtained are significantly higher than those previously observed for p+ samples. The porosity dependence is measured to be V-L = 8.43 (1 - P)0.58 km/s, where V-L is longitudinal velocity and P is porosity. The low value of the exponent (0.58) is an indication of a relatively well-ordered pore structure.

AB - The longitudinal acoustic velocity for 1 GHz waves propagating along the 100 direction in p++ porous silicon layers has been measured using an acoustic wave transmission technique. The velocities obtained are significantly higher than those previously observed for p+ samples. The porosity dependence is measured to be V-L = 8.43 (1 - P)0.58 km/s, where V-L is longitudinal velocity and P is porosity. The low value of the exponent (0.58) is an indication of a relatively well-ordered pore structure.

UR - https://www.scopus.com/pages/publications/70949085689

UR - http://dx.doi.org/10.1002/pssc.200881102

U2 - 10.1002/pssc.200881102

DO - 10.1002/pssc.200881102

M3 - Article

SN - 1610-1634

VL - 6

SP - 1670

EP - 1674

JO - Physica Status Solidi (C)

JF - Physica Status Solidi (C)

IS - 7

T2 - 6th International Conference on Porous Semiconductors Science and Technology

Y2 - 10 March 2008 through 14 March 2008

ER -

Porosity dependence of the acoustic longitudinal velocity inheavily doped P⁺⁺ porous silicon layers

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SOUND-LIGHT INTERACTIONS IN SPATIALLY PERIOD NANOPOROUS SILI CON STRUCTURES

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Porosity dependence of the acoustic longitudinal velocity inheavily doped P++ porous silicon layers

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SOUND-LIGHT INTERACTIONS IN SPATIALLY PERIOD NANOPOROUS SILI CON STRUCTURES

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Porosity dependence of the acoustic longitudinal velocity inheavily doped P⁺⁺ porous silicon layers