Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator

Saleem Anwar, Beomjin Jeong, Mohammad Mahdi Abolhasani, Wojciech Zajaczkowski, Morteza Hassanpour Amiri, Kamal Asadi

Research output: Contribution to journalArticlepeer-review

4 Citations (SciVal)


Nylons are one of the most successful commercialized polymers and can also be made to have ferroelectric properties. However, use of nylons in microelectronic devices like ferroelectric field-effect transistors has proven to be challenging due to the difficulty in achieving ferroelectric thin films by solution processing. In this work, we present ferroelectric field-effect transistor (FeFET) memory with a ferroelectric nylon-11 gate. Water quenching allows for the fabrication of ultra-smooth ferroelectric nylon-11 thin films. A bottom-gate top-contact (BGTC) FeFET is successfully demonstrated with a p-type semiconducting polymer, poly(triaryl amine) (PTAA), as a channel. The nylon-11 FeFET shows reliable memory functionality. The demonstration of nylon-11 based FeFETs makes nylons a promising material for applications in organic electronics, such as flexible devices, electronic textiles and biomedical devices.

Original languageEnglish
Pages (from-to)5535-5540
Number of pages6
JournalJournal of Materials Chemistry C
Issue number16
Publication statusPublished - 28 Apr 2020

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry


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