Abstract
Nylons are one of the most successful commercialized polymers and can also be made to have ferroelectric properties. However, use of nylons in microelectronic devices like ferroelectric field-effect transistors has proven to be challenging due to the difficulty in achieving ferroelectric thin films by solution processing. In this work, we present ferroelectric field-effect transistor (FeFET) memory with a ferroelectric nylon-11 gate. Water quenching allows for the fabrication of ultra-smooth ferroelectric nylon-11 thin films. A bottom-gate top-contact (BGTC) FeFET is successfully demonstrated with a p-type semiconducting polymer, poly(triaryl amine) (PTAA), as a channel. The nylon-11 FeFET shows reliable memory functionality. The demonstration of nylon-11 based FeFETs makes nylons a promising material for applications in organic electronics, such as flexible devices, electronic textiles and biomedical devices.
| Original language | English |
|---|---|
| Pages (from-to) | 5535-5540 |
| Number of pages | 6 |
| Journal | Journal of Materials Chemistry C |
| Volume | 8 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 28 Apr 2020 |
Funding
B. J. and M. M. A. would like to thank the Alexander von Humboldt Foundation for their financial support. S. A. thanks the National University of Science and Technology (Pakistan) for the financial support. K. A. and M. H. A. acknowledge the Alexander von Humboldt Foundation for the funding provided in the framework of the Sofja Kovalevskaja Award, endowed by the Federal Ministry of Education and Research, Germany and the Max-Planck Institute for Polymer Research for technical support. Open Access funding provided by the Max Planck Society.
ASJC Scopus subject areas
- General Chemistry
- Materials Chemistry