Polycrystalline silicon ion sensitive field effect transistors

F Yan, Pedro Estrela, Y Mo, P Migliorato, H Maeda, S Inoue, T Shimoda

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Abstract

We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54 mV/pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10 mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM. (C) 2005 American Institute of Physics.
Original languageEnglish
Pages (from-to)053901
Number of pages1
JournalApplied Physics Letters
Volume86
Issue number5
DOIs
Publication statusPublished - 2005

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    Yan, F., Estrela, P., Mo, Y., Migliorato, P., Maeda, H., Inoue, S., & Shimoda, T. (2005). Polycrystalline silicon ion sensitive field effect transistors. Applied Physics Letters, 86(5), 053901. https://doi.org/10.1063/1.1854192