Polarization and field dependent two-photon absorption in GaAs/AlGaAs multiquantum well waveguides in the half-band gap spectral region

H. K. Tsang, R. V. Penty, I. H. White, R. S. Grant, W. Sibbett, J. B.D. Soole, H. P. LeBlanc, N. C. Andreadakis, E. Colas, M. S. Kim

Research output: Contribution to journalArticle

Abstract

We report the observation of two photon absorption which is strongly dependent on the applied electric field and the optical polarization. At 1.55 μm wavelength, the two-photon absorption coefficient of the GaAs/AlGaAs multiquantum well (MQW) waveguides for transverse-magnetic light is about seven times lower than for transverse-electric polarized light and changes by a factor of approximately 4 for a change in applied direct-current electric field of ∼140 kV/cm. Ultrafast nonlinear refraction causing phase changes of over π radians without appreciable excess loss is observed. These measurements demonstrate that GaAs/AlGaAs MQW waveguides could be successfully used for subpicosecond all-optical switching near half-band gap, at wavelengths corresponding to the 1.55 μm optical communications band.

Original languageEnglish
Pages (from-to)3440-3442
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number26
DOIs
Publication statusPublished - 1 Dec 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Polarization and field dependent two-photon absorption in GaAs/AlGaAs multiquantum well waveguides in the half-band gap spectral region. / Tsang, H. K.; Penty, R. V.; White, I. H.; Grant, R. S.; Sibbett, W.; Soole, J. B.D.; LeBlanc, H. P.; Andreadakis, N. C.; Colas, E.; Kim, M. S.

In: Applied Physics Letters, Vol. 59, No. 26, 01.12.1991, p. 3440-3442.

Research output: Contribution to journalArticle

Tsang, HK, Penty, RV, White, IH, Grant, RS, Sibbett, W, Soole, JBD, LeBlanc, HP, Andreadakis, NC, Colas, E & Kim, MS 1991, 'Polarization and field dependent two-photon absorption in GaAs/AlGaAs multiquantum well waveguides in the half-band gap spectral region', Applied Physics Letters, vol. 59, no. 26, pp. 3440-3442. https://doi.org/10.1063/1.105700
Tsang, H. K. ; Penty, R. V. ; White, I. H. ; Grant, R. S. ; Sibbett, W. ; Soole, J. B.D. ; LeBlanc, H. P. ; Andreadakis, N. C. ; Colas, E. ; Kim, M. S. / Polarization and field dependent two-photon absorption in GaAs/AlGaAs multiquantum well waveguides in the half-band gap spectral region. In: Applied Physics Letters. 1991 ; Vol. 59, No. 26. pp. 3440-3442.
@article{8038e3868ad442be8b439d4d7a6443a3,
title = "Polarization and field dependent two-photon absorption in GaAs/AlGaAs multiquantum well waveguides in the half-band gap spectral region",
abstract = "We report the observation of two photon absorption which is strongly dependent on the applied electric field and the optical polarization. At 1.55 μm wavelength, the two-photon absorption coefficient of the GaAs/AlGaAs multiquantum well (MQW) waveguides for transverse-magnetic light is about seven times lower than for transverse-electric polarized light and changes by a factor of approximately 4 for a change in applied direct-current electric field of ∼140 kV/cm. Ultrafast nonlinear refraction causing phase changes of over π radians without appreciable excess loss is observed. These measurements demonstrate that GaAs/AlGaAs MQW waveguides could be successfully used for subpicosecond all-optical switching near half-band gap, at wavelengths corresponding to the 1.55 μm optical communications band.",
author = "Tsang, {H. K.} and Penty, {R. V.} and White, {I. H.} and Grant, {R. S.} and W. Sibbett and Soole, {J. B.D.} and LeBlanc, {H. P.} and Andreadakis, {N. C.} and E. Colas and Kim, {M. S.}",
year = "1991",
month = "12",
day = "1",
doi = "10.1063/1.105700",
language = "English",
volume = "59",
pages = "3440--3442",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AIP Publishing",
number = "26",

}

TY - JOUR

T1 - Polarization and field dependent two-photon absorption in GaAs/AlGaAs multiquantum well waveguides in the half-band gap spectral region

AU - Tsang, H. K.

AU - Penty, R. V.

AU - White, I. H.

AU - Grant, R. S.

AU - Sibbett, W.

AU - Soole, J. B.D.

AU - LeBlanc, H. P.

AU - Andreadakis, N. C.

AU - Colas, E.

AU - Kim, M. S.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - We report the observation of two photon absorption which is strongly dependent on the applied electric field and the optical polarization. At 1.55 μm wavelength, the two-photon absorption coefficient of the GaAs/AlGaAs multiquantum well (MQW) waveguides for transverse-magnetic light is about seven times lower than for transverse-electric polarized light and changes by a factor of approximately 4 for a change in applied direct-current electric field of ∼140 kV/cm. Ultrafast nonlinear refraction causing phase changes of over π radians without appreciable excess loss is observed. These measurements demonstrate that GaAs/AlGaAs MQW waveguides could be successfully used for subpicosecond all-optical switching near half-band gap, at wavelengths corresponding to the 1.55 μm optical communications band.

AB - We report the observation of two photon absorption which is strongly dependent on the applied electric field and the optical polarization. At 1.55 μm wavelength, the two-photon absorption coefficient of the GaAs/AlGaAs multiquantum well (MQW) waveguides for transverse-magnetic light is about seven times lower than for transverse-electric polarized light and changes by a factor of approximately 4 for a change in applied direct-current electric field of ∼140 kV/cm. Ultrafast nonlinear refraction causing phase changes of over π radians without appreciable excess loss is observed. These measurements demonstrate that GaAs/AlGaAs MQW waveguides could be successfully used for subpicosecond all-optical switching near half-band gap, at wavelengths corresponding to the 1.55 μm optical communications band.

UR - http://www.scopus.com/inward/record.url?scp=36449005313&partnerID=8YFLogxK

U2 - 10.1063/1.105700

DO - 10.1063/1.105700

M3 - Article

VL - 59

SP - 3440

EP - 3442

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -