Polarisation dependent all-optical nonlinearity far from the bandedge in active GaAs/AlGaAs quantum well waveguides

I. H. White, H. K. Tsang, R. V. Penty, B. Garrett

Research output: Contribution to journalConference article


This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.

Original languageEnglish
JournalIEE Colloquium (Digest)
Issue number103
Publication statusPublished - 1 Dec 1990
EventColloquium on Applications of Quantum Wells in Optoelectronics - London, Engl
Duration: 13 Jun 199013 Jun 1990

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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