This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a  n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.
|Journal||IEE Colloquium (Digest)|
|Publication status||Published - 1 Dec 1990|
|Event||Colloquium on Applications of Quantum Wells in Optoelectronics - London, Engl|
Duration: 13 Jun 1990 → 13 Jun 1990
ASJC Scopus subject areas
- Electrical and Electronic Engineering