Planar non-volatile memory based on metal nanoparticles

A. Kiazadeh; H. L. Gomes; A. R. Da Costa; P. Rocha; Q. Chen; J. A. Moreira; D. M. De Leeuw; S. C J Meskers

doi:10.1557/opl.2011.1126

Planar non-volatile memory based on metal nanoparticles

A. Kiazadeh, H. L. Gomes, A. R. Da Costa, P. Rocha, Q. Chen, J. A. Moreira, D. M. De Leeuw, S. C J Meskers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (SciVal)

Abstract

Resistive switching properties of stiver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated These devices have on/off resistance ratio as high as 10 ³, retention times reaching to months and good endurance cycles. Temperature-dependent measurements show mat the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

Original language	English
Title of host publication	New Functional Materials and Emerging Device Architectures for Nonvolatile Memories
Publisher	Cambridge University Press
Pages	151-156
Number of pages	6
ISBN (Print)	9781605113142
DOIs	https://doi.org/10.1557/opl.2011.1126
Publication status	Published - 29 Dec 2011
Event	2011 MRS Spring Meeting - San Francisco, CA, USA United States Duration: 25 Apr 2011 → 29 Apr 2011

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1337
ISSN (Print)	0272-9172

Conference

Conference	2011 MRS Spring Meeting
Country/Territory	USA United States
City	San Francisco, CA
Period	25/04/11 → 29/04/11

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

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10.1557/opl.2011.1126

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Kiazadeh, A., Gomes, H. L., Da Costa, A. R., Rocha, P., Chen, Q., Moreira, J. A., De Leeuw, D. M., & Meskers, S. C. J. (2011). Planar non-volatile memory based on metal nanoparticles. In New Functional Materials and Emerging Device Architectures for Nonvolatile Memories (pp. 151-156). (Materials Research Society Symposium Proceedings; Vol. 1337). Cambridge University Press. https://doi.org/10.1557/opl.2011.1126

Planar non-volatile memory based on metal nanoparticles. / Kiazadeh, A.; Gomes, H. L.; Da Costa, A. R.; Rocha, P.; Chen, Q.; Moreira, J. A.; De Leeuw, D. M.; Meskers, S. C J.

New Functional Materials and Emerging Device Architectures for Nonvolatile Memories. Cambridge University Press, 2011. p. 151-156 (Materials Research Society Symposium Proceedings; Vol. 1337).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kiazadeh, A, Gomes, HL, Da Costa, AR, Rocha, P, Chen, Q, Moreira, JA, De Leeuw, DM & Meskers, SCJ 2011, Planar non-volatile memory based on metal nanoparticles. in New Functional Materials and Emerging Device Architectures for Nonvolatile Memories. Materials Research Society Symposium Proceedings, vol. 1337, Cambridge University Press, pp. 151-156, 2011 MRS Spring Meeting, San Francisco, CA, USA United States, 25/04/11. https://doi.org/10.1557/opl.2011.1126

@inproceedings{b539ae5029954668b3e36fb8bfd06dfb,

title = "Planar non-volatile memory based on metal nanoparticles",

abstract = "Resistive switching properties of stiver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated These devices have on/off resistance ratio as high as 10 3, retention times reaching to months and good endurance cycles. Temperature-dependent measurements show mat the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.",

author = "A. Kiazadeh and Gomes, {H. L.} and {Da Costa}, {A. R.} and P. Rocha and Q. Chen and Moreira, {J. A.} and {De Leeuw}, {D. M.} and Meskers, {S. C J}",

year = "2011",

month = dec,

day = "29",

doi = "10.1557/opl.2011.1126",

language = "English",

isbn = "9781605113142",

series = "Materials Research Society Symposium Proceedings",

publisher = "Cambridge University Press",

pages = "151--156",

booktitle = "New Functional Materials and Emerging Device Architectures for Nonvolatile Memories",

address = "UK United Kingdom",

note = "2011 MRS Spring Meeting ; Conference date: 25-04-2011 Through 29-04-2011",

}

TY - GEN

T1 - Planar non-volatile memory based on metal nanoparticles

AU - Kiazadeh, A.

AU - Gomes, H. L.

AU - Da Costa, A. R.

AU - Rocha, P.

AU - Chen, Q.

AU - Moreira, J. A.

AU - De Leeuw, D. M.

AU - Meskers, S. C J

PY - 2011/12/29

Y1 - 2011/12/29

N2 - Resistive switching properties of stiver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated These devices have on/off resistance ratio as high as 10 3, retention times reaching to months and good endurance cycles. Temperature-dependent measurements show mat the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

AB - Resistive switching properties of stiver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated These devices have on/off resistance ratio as high as 10 3, retention times reaching to months and good endurance cycles. Temperature-dependent measurements show mat the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

UR - http://www.scopus.com/inward/record.url?scp=84455183631&partnerID=8YFLogxK

U2 - 10.1557/opl.2011.1126

DO - 10.1557/opl.2011.1126

M3 - Conference contribution

AN - SCOPUS:84455183631

SN - 9781605113142

T3 - Materials Research Society Symposium Proceedings

SP - 151

EP - 156

BT - New Functional Materials and Emerging Device Architectures for Nonvolatile Memories

PB - Cambridge University Press

T2 - 2011 MRS Spring Meeting

Y2 - 25 April 2011 through 29 April 2011

ER -

Planar non-volatile memory based on metal nanoparticles

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