Planar non-volatile memory based on metal nanoparticles

A. Kiazadeh, H. L. Gomes, A. R. Da Costa, P. Rocha, Q. Chen, J. A. Moreira, D. M. De Leeuw, S. C J Meskers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Resistive switching properties of stiver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated These devices have on/off resistance ratio as high as 10 3, retention times reaching to months and good endurance cycles. Temperature-dependent measurements show mat the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

Original languageEnglish
Title of host publicationNew Functional Materials and Emerging Device Architectures for Nonvolatile Memories
PublisherCambridge University Press
Pages151-156
Number of pages6
ISBN (Print)9781605113142
DOIs
Publication statusPublished - 29 Dec 2011
Event2011 MRS Spring Meeting - San Francisco, CA, USA United States
Duration: 25 Apr 201129 Apr 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1337
ISSN (Print)0272-9172

Conference

Conference2011 MRS Spring Meeting
CountryUSA United States
CitySan Francisco, CA
Period25/04/1129/04/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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