Planar non-volatile memory based on metal nanoparticles

A. Kiazadeh, H. L. Gomes, A. R. Da Costa, P. Rocha, Q. Chen, J. A. Moreira, D. M. De Leeuw, S. C J Meskers

Research output: Chapter or section in a book/report/conference proceedingChapter in a published conference proceeding

1 Citation (SciVal)


Resistive switching properties of stiver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated These devices have on/off resistance ratio as high as 10 3, retention times reaching to months and good endurance cycles. Temperature-dependent measurements show mat the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

Original languageEnglish
Title of host publicationNew Functional Materials and Emerging Device Architectures for Nonvolatile Memories
PublisherCambridge University Press
Number of pages6
ISBN (Print)9781605113142
Publication statusPublished - 29 Dec 2011
Event2011 MRS Spring Meeting - San Francisco, CA, USA United States
Duration: 25 Apr 201129 Apr 2011

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2011 MRS Spring Meeting
Country/TerritoryUSA United States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials


Dive into the research topics of 'Planar non-volatile memory based on metal nanoparticles'. Together they form a unique fingerprint.

Cite this