Planar non-volatile memory based on metal nanoparticles

A. Kiazadeh; H. L. Gomes; A. R. Da Costa; P. Rocha; Q. Chen; J. A. Moreira; D. M. De Leeuw; S. C J Meskers

doi:10.1557/opl.2011.1126

Planar non-volatile memory based on metal nanoparticles

A. Kiazadeh, H. L. Gomes, A. R. Da Costa, P. Rocha, Q. Chen, J. A. Moreira, D. M. De Leeuw, S. C J Meskers

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

Resistive switching properties of stiver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated These devices have on/off resistance ratio as high as 10 ³, retention times reaching to months and good endurance cycles. Temperature-dependent measurements show mat the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

Original language	English
Title of host publication	New Functional Materials and Emerging Device Architectures for Nonvolatile Memories
Publisher	Cambridge University Press
Pages	151-156
Number of pages	6
ISBN (Print)	9781605113142
DOIs	https://doi.org/10.1557/opl.2011.1126
Publication status	Published - 29 Dec 2011
Event	2011 MRS Spring Meeting - San Francisco, CA, USA United States Duration: 25 Apr 2011 → 29 Apr 2011

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1337
ISSN (Print)	0272-9172

Conference

Conference	2011 MRS Spring Meeting
Country/Territory	USA United States
City	San Francisco, CA
Period	25/04/11 → 29/04/11

Funding

We gratefully acknowledge the financial support received from the Dutch Polymer Institute (DPI), project n.º 703, from Fundação para Ciência e Tecnologia (FCT) through the research Unit, Center of Electronics Optoelectronics and Telecommunications (CEOT), REEQ/601/EEI/2005 and the POCI 2010, FEDER

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

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10.1557/opl.2011.1126

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Kiazadeh, A., Gomes, H. L., Da Costa, A. R., Rocha, P., Chen, Q., Moreira, J. A., De Leeuw, D. M., & Meskers, S. C. J. (2011). Planar non-volatile memory based on metal nanoparticles. In New Functional Materials and Emerging Device Architectures for Nonvolatile Memories (pp. 151-156). (Materials Research Society Symposium Proceedings; Vol. 1337). Cambridge University Press. https://doi.org/10.1557/opl.2011.1126

Planar non-volatile memory based on metal nanoparticles. / Kiazadeh, A.; Gomes, H. L.; Da Costa, A. R. et al.
New Functional Materials and Emerging Device Architectures for Nonvolatile Memories. Cambridge University Press, 2011. p. 151-156 (Materials Research Society Symposium Proceedings; Vol. 1337).

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Kiazadeh, A, Gomes, HL, Da Costa, AR, Rocha, P, Chen, Q, Moreira, JA, De Leeuw, DM & Meskers, SCJ 2011, Planar non-volatile memory based on metal nanoparticles. in New Functional Materials and Emerging Device Architectures for Nonvolatile Memories. Materials Research Society Symposium Proceedings, vol. 1337, Cambridge University Press, pp. 151-156, 2011 MRS Spring Meeting, San Francisco, CA, USA United States, 25/04/11. https://doi.org/10.1557/opl.2011.1126

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AB - Resistive switching properties of stiver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated These devices have on/off resistance ratio as high as 10 3, retention times reaching to months and good endurance cycles. Temperature-dependent measurements show mat the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

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Planar non-volatile memory based on metal nanoparticles

Abstract

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ASJC Scopus subject areas

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