Photomodulated reflectivity of Zn1 - xMnxTe/ZnTe multiple quantum wells

P. J. Klar; D. Wolverson; D. E. Ashenford; B. Lunn

doi:10.1016/0022-0248(96)80026-1

Photomodulated reflectivity of Zn_{1 - x}Mn_xTe/ZnTe multiple quantum wells

P. J. Klar, D. Wolverson, D. E. Ashenford, B. Lunn

Research output: Contribution to journal › Article › peer-review

7 Citations (SciVal)

Abstract

A Zn_0.93Mn_0.07Te/ZnTe multiple quantum well sample has been studied by modulation spectroscopy using conventional photoreflectivity with above-band-gap laser modulation (a-PR) as well as by a novel version of the technique which employs below-band-gap laser modulation (b-PR). For both techniques, temperature dependent measurements from 10 to 150 K were carried out and, for b-PR, modulation frequency dependent measurements over the range 40-13 kHz were also performed. Although the appearance of the b-PR spectra is different from the a-PR spectra, both techniques give the same spectroscopic information. There is evidence that b-PR is, like a-PR, a form of electroreflectance spectroscopy. However, while the a-PR modulation mechanism is mainly determined by photoexcitation across the band gap, the photoexcitation of deep levels seems to be the dominant mechanism for b-PR.

Original language	English
Pages (from-to)	528-532
Number of pages	5
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(96)80026-1
Publication status	Published - Feb 1996

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(96)80026-1

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title = "Photomodulated reflectivity of Zn1 - xMnxTe/ZnTe multiple quantum wells",

abstract = "A Zn0.93Mn0.07Te/ZnTe multiple quantum well sample has been studied by modulation spectroscopy using conventional photoreflectivity with above-band-gap laser modulation (a-PR) as well as by a novel version of the technique which employs below-band-gap laser modulation (b-PR). For both techniques, temperature dependent measurements from 10 to 150 K were carried out and, for b-PR, modulation frequency dependent measurements over the range 40-13 kHz were also performed. Although the appearance of the b-PR spectra is different from the a-PR spectra, both techniques give the same spectroscopic information. There is evidence that b-PR is, like a-PR, a form of electroreflectance spectroscopy. However, while the a-PR modulation mechanism is mainly determined by photoexcitation across the band gap, the photoexcitation of deep levels seems to be the dominant mechanism for b-PR.",

author = "Klar, {P. J.} and D. Wolverson and Ashenford, {D. E.} and B. Lunn",

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T1 - Photomodulated reflectivity of Zn1 - xMnxTe/ZnTe multiple quantum wells

AU - Klar, P. J.

AU - Wolverson, D.

AU - Ashenford, D. E.

AU - Lunn, B.

PY - 1996/2

Y1 - 1996/2

N2 - A Zn0.93Mn0.07Te/ZnTe multiple quantum well sample has been studied by modulation spectroscopy using conventional photoreflectivity with above-band-gap laser modulation (a-PR) as well as by a novel version of the technique which employs below-band-gap laser modulation (b-PR). For both techniques, temperature dependent measurements from 10 to 150 K were carried out and, for b-PR, modulation frequency dependent measurements over the range 40-13 kHz were also performed. Although the appearance of the b-PR spectra is different from the a-PR spectra, both techniques give the same spectroscopic information. There is evidence that b-PR is, like a-PR, a form of electroreflectance spectroscopy. However, while the a-PR modulation mechanism is mainly determined by photoexcitation across the band gap, the photoexcitation of deep levels seems to be the dominant mechanism for b-PR.

AB - A Zn0.93Mn0.07Te/ZnTe multiple quantum well sample has been studied by modulation spectroscopy using conventional photoreflectivity with above-band-gap laser modulation (a-PR) as well as by a novel version of the technique which employs below-band-gap laser modulation (b-PR). For both techniques, temperature dependent measurements from 10 to 150 K were carried out and, for b-PR, modulation frequency dependent measurements over the range 40-13 kHz were also performed. Although the appearance of the b-PR spectra is different from the a-PR spectra, both techniques give the same spectroscopic information. There is evidence that b-PR is, like a-PR, a form of electroreflectance spectroscopy. However, while the a-PR modulation mechanism is mainly determined by photoexcitation across the band gap, the photoexcitation of deep levels seems to be the dominant mechanism for b-PR.

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ER -

Photomodulated reflectivity of Zn_{1 - x}Mn_xTe/ZnTe multiple quantum wells

Abstract

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