Photoluminescence response of ion-implanted silicon

Research output: Contribution to journal › Article › peer-review

16 Citations (SciVal)

ID number: ISI:000241757500036

Access to Document

@article{57fc06dd1e114d8e9cd696d95ee04a9b,

title = "Photoluminescence response of ion-implanted silicon",

author = "Harding, \{R E\} and G Davies and S Hayama and Coleman, \{P G\} and Burrows, \{C P\} and J Wong-Leung",

note = "ID number: ISI:000241757500036",

year = "2006",

doi = "10.1063/1.2378402",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Photoluminescence response of ion-implanted silicon

AU - Harding, R E

AU - Davies, G

AU - Hayama, S

AU - Coleman, P G

AU - Burrows, C P

AU - Wong-Leung, J

N1 - ID number: ISI:000241757500036

PY - 2006

Y1 - 2006

U2 - 10.1063/1.2378402

DO - 10.1063/1.2378402

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -