Photoluminescence response of ion-implanted silicon

R E Harding, G Davies, S Hayama, P G Coleman, C P Burrows, J Wong-Leung

Research output: Contribution to journalArticle

12 Citations (Scopus)
Original languageEnglish
JournalApplied Physics Letters
Volume89
Issue number18
Publication statusPublished - 2006

Cite this

Harding, R. E., Davies, G., Hayama, S., Coleman, P. G., Burrows, C. P., & Wong-Leung, J. (2006). Photoluminescence response of ion-implanted silicon. Applied Physics Letters, 89(18).

Photoluminescence response of ion-implanted silicon. / Harding, R E; Davies, G; Hayama, S; Coleman, P G; Burrows, C P; Wong-Leung, J.

In: Applied Physics Letters, Vol. 89, No. 18, 2006.

Research output: Contribution to journalArticle

Harding, RE, Davies, G, Hayama, S, Coleman, PG, Burrows, CP & Wong-Leung, J 2006, 'Photoluminescence response of ion-implanted silicon', Applied Physics Letters, vol. 89, no. 18.
Harding RE, Davies G, Hayama S, Coleman PG, Burrows CP, Wong-Leung J. Photoluminescence response of ion-implanted silicon. Applied Physics Letters. 2006;89(18).
Harding, R E ; Davies, G ; Hayama, S ; Coleman, P G ; Burrows, C P ; Wong-Leung, J. / Photoluminescence response of ion-implanted silicon. In: Applied Physics Letters. 2006 ; Vol. 89, No. 18.
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