Photoluminescence of single GaN/InGaN nanorod light emitting diode fabricated on a wafer scale

Christopher C. S. Chan, Yiding Zhuang, Benjamin P. L. Reid, Wei Jia, Mark J. Holmes, Jack A. Alexander-webber, Shingo Nakazawa, Philip A. Shields, Duncan W. E. Allsopp, Robert A. Taylor

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Nanorod arrays were fabricated on a blue InGaN/GaN single quantum well (QW) LED wafer using nanoimprint lithography. A regular hexagonal lattice of nanorods was made at a pitch of 2 µm producing single quantum disks in the nanorods with diameter of ∼400 nm. Time integrated micro-photoluminescence was performed to investigate the emission properties of top down processed single nanorods at 4.2 K. Micro-photoluminescence maps were made to study the spatial isolation of the photoluminescence emission, showing a good contrast ratio between nanorods. Excitation power dependent studies show screening of the quantum confined Stark effect for both the unprocessed wafer and the single nanorod. At low excitation powers, localised states appearing as sharp peaks in the photoluminescence spectrum were visible with a density of approximately four peaks per nanorod.
Original languageEnglish
Article number08JE20
Number of pages4
JournalJapanese Journal of Applied Physics
Volume52
Issue numberNo 8, Part 2
Early online date20 Jun 2013
DOIs
Publication statusPublished - Aug 2013

Fingerprint

Nanorods
nanorods
Light emitting diodes
Photoluminescence
light emitting diodes
wafers
photoluminescence
Stark effect
Nanoimprint lithography
visible spectrum
Semiconductor quantum wells
excitation
isolation
Screening
screening
lithography
quantum wells

Cite this

Chan, C. C. S., Zhuang, Y., Reid, B. P. L., Jia, W., Holmes, M. J., Alexander-webber, J. A., ... Taylor, R. A. (2013). Photoluminescence of single GaN/InGaN nanorod light emitting diode fabricated on a wafer scale. Japanese Journal of Applied Physics, 52(No 8, Part 2), [08JE20]. https://doi.org/10.7567/JJAP.52.08JE20

Photoluminescence of single GaN/InGaN nanorod light emitting diode fabricated on a wafer scale. / Chan, Christopher C. S.; Zhuang, Yiding; Reid, Benjamin P. L.; Jia, Wei; Holmes, Mark J.; Alexander-webber, Jack A.; Nakazawa, Shingo; Shields, Philip A.; Allsopp, Duncan W. E.; Taylor, Robert A.

In: Japanese Journal of Applied Physics, Vol. 52, No. No 8, Part 2, 08JE20, 08.2013.

Research output: Contribution to journalArticle

Chan, CCS, Zhuang, Y, Reid, BPL, Jia, W, Holmes, MJ, Alexander-webber, JA, Nakazawa, S, Shields, PA, Allsopp, DWE & Taylor, RA 2013, 'Photoluminescence of single GaN/InGaN nanorod light emitting diode fabricated on a wafer scale', Japanese Journal of Applied Physics, vol. 52, no. No 8, Part 2, 08JE20. https://doi.org/10.7567/JJAP.52.08JE20
Chan CCS, Zhuang Y, Reid BPL, Jia W, Holmes MJ, Alexander-webber JA et al. Photoluminescence of single GaN/InGaN nanorod light emitting diode fabricated on a wafer scale. Japanese Journal of Applied Physics. 2013 Aug;52(No 8, Part 2). 08JE20. https://doi.org/10.7567/JJAP.52.08JE20
Chan, Christopher C. S. ; Zhuang, Yiding ; Reid, Benjamin P. L. ; Jia, Wei ; Holmes, Mark J. ; Alexander-webber, Jack A. ; Nakazawa, Shingo ; Shields, Philip A. ; Allsopp, Duncan W. E. ; Taylor, Robert A. / Photoluminescence of single GaN/InGaN nanorod light emitting diode fabricated on a wafer scale. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. No 8, Part 2.
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abstract = "Nanorod arrays were fabricated on a blue InGaN/GaN single quantum well (QW) LED wafer using nanoimprint lithography. A regular hexagonal lattice of nanorods was made at a pitch of 2 µm producing single quantum disks in the nanorods with diameter of ∼400 nm. Time integrated micro-photoluminescence was performed to investigate the emission properties of top down processed single nanorods at 4.2 K. Micro-photoluminescence maps were made to study the spatial isolation of the photoluminescence emission, showing a good contrast ratio between nanorods. Excitation power dependent studies show screening of the quantum confined Stark effect for both the unprocessed wafer and the single nanorod. At low excitation powers, localised states appearing as sharp peaks in the photoluminescence spectrum were visible with a density of approximately four peaks per nanorod.",
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AU - Chan, Christopher C. S.

AU - Zhuang, Yiding

AU - Reid, Benjamin P. L.

AU - Jia, Wei

AU - Holmes, Mark J.

AU - Alexander-webber, Jack A.

AU - Nakazawa, Shingo

AU - Shields, Philip A.

AU - Allsopp, Duncan W. E.

AU - Taylor, Robert A.

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AB - Nanorod arrays were fabricated on a blue InGaN/GaN single quantum well (QW) LED wafer using nanoimprint lithography. A regular hexagonal lattice of nanorods was made at a pitch of 2 µm producing single quantum disks in the nanorods with diameter of ∼400 nm. Time integrated micro-photoluminescence was performed to investigate the emission properties of top down processed single nanorods at 4.2 K. Micro-photoluminescence maps were made to study the spatial isolation of the photoluminescence emission, showing a good contrast ratio between nanorods. Excitation power dependent studies show screening of the quantum confined Stark effect for both the unprocessed wafer and the single nanorod. At low excitation powers, localised states appearing as sharp peaks in the photoluminescence spectrum were visible with a density of approximately four peaks per nanorod.

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