Photoluminescence mapping of GaN epilayers with different degrees of order of mosaic structure

N M Shmidt, G Aliev, A N Besul'kin, M S Dunaevsky, A G Kolmakov, A V Loskutov, W V Lundin, A V Sakharov, A S Usikov, D Wolverson, E E Zavarin, E B Yakimov

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials 2003
Pages333-336
Number of pages4
Publication statusPublished - 2003

Publication series

NameInstitute of Physics Conference Series

Cite this

Shmidt, N. M., Aliev, G., Besul'kin, A. N., Dunaevsky, M. S., Kolmakov, A. G., Loskutov, A. V., Lundin, W. V., Sakharov, A. V., Usikov, A. S., Wolverson, D., Zavarin, E. E., & Yakimov, E. B. (2003). Photoluminescence mapping of GaN epilayers with different degrees of order of mosaic structure. In Microscopy of Semiconducting Materials 2003 (pp. 333-336). (Institute of Physics Conference Series).