Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques

D. C. Moschou; M. A. Exarchos; D. N. Kouvatsos; G. J. Papaioannou; A. T. Voutsas

doi:10.1016/j.microrel.2007.07.073

Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques

D. C. Moschou, M. A. Exarchos, D. N. Kouvatsos, G. J. Papaioannou, A. T. Voutsas

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (SciVal)

Abstract

SLS ELA polysilicon TFTs fabricated in films crystallized with several novel techniques, yielding different film microstructure and texture, were investigated. The parameter statistics indicate that the TFT performance depends on film quality and asperities, in conjunction with the grain boundary trap density. The drain current transients, upon TFT switch from OFF to ON state, showed gate oxide polarization, related to film asperities and also confirmed the presence of extended defects in the TFTs of small mobilities. DC hot carrier stress was applied, indicating a reliability dependence on polysilicon structure and differences in degradation mechanisms for the various TFT technologies.

Original language	English
Pages (from-to)	1378-1383
Number of pages	6
Journal	Microelectronics Reliability
Volume	47
Issue number	9-11 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.microrel.2007.07.073
Publication status	Published - Aug 2007

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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10.1016/j.microrel.2007.07.073

https://doi.org/10.1016/j.microrel.2007.07.073

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title = "Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques",

abstract = "SLS ELA polysilicon TFTs fabricated in films crystallized with several novel techniques, yielding different film microstructure and texture, were investigated. The parameter statistics indicate that the TFT performance depends on film quality and asperities, in conjunction with the grain boundary trap density. The drain current transients, upon TFT switch from OFF to ON state, showed gate oxide polarization, related to film asperities and also confirmed the presence of extended defects in the TFTs of small mobilities. DC hot carrier stress was applied, indicating a reliability dependence on polysilicon structure and differences in degradation mechanisms for the various TFT technologies.",

author = "Moschou, \{D. C.\} and Exarchos, \{M. A.\} and Kouvatsos, \{D. N.\} and Papaioannou, \{G. J.\} and Voutsas, \{A. T.\}",

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AU - Moschou, D. C.

AU - Exarchos, M. A.

AU - Kouvatsos, D. N.

AU - Papaioannou, G. J.

AU - Voutsas, A. T.

PY - 2007/8

Y1 - 2007/8

N2 - SLS ELA polysilicon TFTs fabricated in films crystallized with several novel techniques, yielding different film microstructure and texture, were investigated. The parameter statistics indicate that the TFT performance depends on film quality and asperities, in conjunction with the grain boundary trap density. The drain current transients, upon TFT switch from OFF to ON state, showed gate oxide polarization, related to film asperities and also confirmed the presence of extended defects in the TFTs of small mobilities. DC hot carrier stress was applied, indicating a reliability dependence on polysilicon structure and differences in degradation mechanisms for the various TFT technologies.

AB - SLS ELA polysilicon TFTs fabricated in films crystallized with several novel techniques, yielding different film microstructure and texture, were investigated. The parameter statistics indicate that the TFT performance depends on film quality and asperities, in conjunction with the grain boundary trap density. The drain current transients, upon TFT switch from OFF to ON state, showed gate oxide polarization, related to film asperities and also confirmed the presence of extended defects in the TFTs of small mobilities. DC hot carrier stress was applied, indicating a reliability dependence on polysilicon structure and differences in degradation mechanisms for the various TFT technologies.

UR - https://www.scopus.com/pages/publications/34548798115

UR - https://doi.org/10.1016/j.microrel.2007.07.073

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AN - SCOPUS:34548798115

SN - 0026-2714

VL - 47

SP - 1378

EP - 1383

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11 SPEC. ISS.

ER -

Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques

Abstract

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