Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques

D. C. Moschou, M. A. Exarchos, D. N. Kouvatsos, G. J. Papaioannou, A. T. Voutsas

Research output: Contribution to journalArticlepeer-review

10 Citations (SciVal)

Abstract

SLS ELA polysilicon TFTs fabricated in films crystallized with several novel techniques, yielding different film microstructure and texture, were investigated. The parameter statistics indicate that the TFT performance depends on film quality and asperities, in conjunction with the grain boundary trap density. The drain current transients, upon TFT switch from OFF to ON state, showed gate oxide polarization, related to film asperities and also confirmed the presence of extended defects in the TFTs of small mobilities. DC hot carrier stress was applied, indicating a reliability dependence on polysilicon structure and differences in degradation mechanisms for the various TFT technologies.

Original languageEnglish
Pages (from-to)1378-1383
Number of pages6
JournalMicroelectronics Reliability
Volume47
Issue number9-11 SPEC. ISS.
DOIs
Publication statusPublished - Aug 2007

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques'. Together they form a unique fingerprint.

Cite this