Pauli-spin-blockade transport through a silicon double quantum dot

H W Liu, T Fujisawa, Y Ono, H Inokawa, A Fujiwara, Kei Takashina, Y Hirayama

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Abstract

We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.
Original languageEnglish
Article number073310
Number of pages4
JournalPhysical Review B
Volume77
Issue number7
DOIs
Publication statusPublished - 15 Feb 2008

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    Liu, H. W., Fujisawa, T., Ono, Y., Inokawa, H., Fujiwara, A., Takashina, K., & Hirayama, Y. (2008). Pauli-spin-blockade transport through a silicon double quantum dot. Physical Review B, 77(7), [073310]. https://doi.org/10.1103/PhysRevB.77.073310