Path-integral calculation of the electron density of states in MIS-structures

high technology 3

G Slavcheva, Ivan Yanchev

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageEnglish
Title of host publicationDevices Based on Low-Dimensional Semiconductor Structures
Subtitle of host publicationProceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996
EditorsMinko Balkanski
Place of PublicationDordrecht, Germany
PublisherKluwer Academic Publishers
Pages189-198
ISBN (Print)9780792341024
Publication statusPublished - 1996

Publication series

NameNATO ASI Series
Number3
Volume14

Cite this

Slavcheva, G., & Yanchev, I. (1996). Path-integral calculation of the electron density of states in MIS-structures: high technology 3. In M. Balkanski (Ed.), Devices Based on Low-Dimensional Semiconductor Structures: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996 (pp. 189-198). (NATO ASI Series; Vol. 14, No. 3). Dordrecht, Germany: Kluwer Academic Publishers.

Path-integral calculation of the electron density of states in MIS-structures : high technology 3. / Slavcheva, G; Yanchev, Ivan.

Devices Based on Low-Dimensional Semiconductor Structures: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996 . ed. / Minko Balkanski. Dordrecht, Germany : Kluwer Academic Publishers, 1996. p. 189-198 (NATO ASI Series; Vol. 14, No. 3).

Research output: Chapter in Book/Report/Conference proceedingChapter

Slavcheva, G & Yanchev, I 1996, Path-integral calculation of the electron density of states in MIS-structures: high technology 3. in M Balkanski (ed.), Devices Based on Low-Dimensional Semiconductor Structures: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996 . NATO ASI Series, no. 3, vol. 14, Kluwer Academic Publishers, Dordrecht, Germany, pp. 189-198.
Slavcheva G, Yanchev I. Path-integral calculation of the electron density of states in MIS-structures: high technology 3. In Balkanski M, editor, Devices Based on Low-Dimensional Semiconductor Structures: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996 . Dordrecht, Germany: Kluwer Academic Publishers. 1996. p. 189-198. (NATO ASI Series; 3).
Slavcheva, G ; Yanchev, Ivan. / Path-integral calculation of the electron density of states in MIS-structures : high technology 3. Devices Based on Low-Dimensional Semiconductor Structures: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996 . editor / Minko Balkanski. Dordrecht, Germany : Kluwer Academic Publishers, 1996. pp. 189-198 (NATO ASI Series; 3).
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