Path-integral calculation of the electron density of states in MIS-structures: high technology 3

G Slavcheva, Ivan Yanchev

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageEnglish
Title of host publicationDevices Based on Low-Dimensional Semiconductor Structures
Subtitle of host publicationProceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996
EditorsMinko Balkanski
Place of PublicationDordrecht, Germany
PublisherKluwer Academic Publishers
Pages189-198
ISBN (Print)9780792341024
Publication statusPublished - 1996

Publication series

NameNATO ASI Series
Number3
Volume14

Cite this

Slavcheva, G., & Yanchev, I. (1996). Path-integral calculation of the electron density of states in MIS-structures: high technology 3. In M. Balkanski (Ed.), Devices Based on Low-Dimensional Semiconductor Structures: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996 (pp. 189-198). (NATO ASI Series; Vol. 14, No. 3). Kluwer Academic Publishers.