Path-integral calculation of the electron density of states in MIS-structures

G Slavcheva, Ivan Yanchev

Research output: Contribution to conferencePaper

Original languageEnglish
Publication statusPublished - 1995
EventNATO ASI: Devices Based on Low-Dimensional Semiconductor Structures - Sozopol, Bulgaria
Duration: 15 Sep 1995 → …

Conference

ConferenceNATO ASI: Devices Based on Low-Dimensional Semiconductor Structures
CountryBulgaria
CitySozopol
Period15/09/95 → …

Cite this

Slavcheva, G., & Yanchev, I. (1995). Path-integral calculation of the electron density of states in MIS-structures. Paper presented at NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures, Sozopol, Bulgaria.

Path-integral calculation of the electron density of states in MIS-structures. / Slavcheva, G; Yanchev, Ivan.

1995. Paper presented at NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures, Sozopol, Bulgaria.

Research output: Contribution to conferencePaper

Slavcheva, G & Yanchev, I 1995, 'Path-integral calculation of the electron density of states in MIS-structures' Paper presented at NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures, Sozopol, Bulgaria, 15/09/95, .
Slavcheva G, Yanchev I. Path-integral calculation of the electron density of states in MIS-structures. 1995. Paper presented at NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures, Sozopol, Bulgaria.
Slavcheva, G ; Yanchev, Ivan. / Path-integral calculation of the electron density of states in MIS-structures. Paper presented at NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures, Sozopol, Bulgaria.
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language = "English",
note = "NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures ; Conference date: 15-09-1995",

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AU - Slavcheva, G

AU - Yanchev, Ivan

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