Original language | English |
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Publication status | Published - 1995 |

Event | NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures - Sozopol, Bulgaria Duration: 15 Sep 1995 → … |

### Conference

Conference | NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures |
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Country | Bulgaria |

City | Sozopol |

Period | 15/09/95 → … |

### Cite this

Slavcheva, G., & Yanchev, I. (1995).

*Path-integral calculation of the electron density of states in MIS-structures*. Paper presented at NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures, Sozopol, Bulgaria.**Path-integral calculation of the electron density of states in MIS-structures.** / Slavcheva, G; Yanchev, Ivan.

Research output: Contribution to conference › Paper

Slavcheva, G & Yanchev, I 1995, 'Path-integral calculation of the electron density of states in MIS-structures' Paper presented at NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures, Sozopol, Bulgaria, 15/09/95, .

Slavcheva G, Yanchev I. Path-integral calculation of the electron density of states in MIS-structures. 1995. Paper presented at NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures, Sozopol, Bulgaria.

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title = "Path-integral calculation of the electron density of states in MIS-structures",

author = "G Slavcheva and Ivan Yanchev",

year = "1995",

language = "English",

note = "NATO ASI: Devices Based on Low-Dimensional Semiconductor Structures ; Conference date: 15-09-1995",

}

TY - CONF

T1 - Path-integral calculation of the electron density of states in MIS-structures

AU - Slavcheva, G

AU - Yanchev, Ivan

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