Path-integral approach to the electron density of states at the interface of a single modulation-doped heterojunction

G Slavcheva; Virulh Sayakanit

Path-integral approach to the electron density of states at the interface of a single modulation-doped heterojunction

G Slavcheva, Virulh Sayakanit

Department of Physics

Chulalongkorn University

Research output: Contribution to conference › Paper › peer-review

Original language	English
Publication status	Published - 1999
Event	The First Stig Lundquist Research Conference on the Advancing Frontiers in Condensed Matter Physics: “Quantum Phases in Electron Systems of Low Dimensions” - International Centre for Theoretical Physics (ICTP), Trieste, Italy Duration: 26 Jul 1999 → 29 Jul 1999

Conference

Conference	The First Stig Lundquist Research Conference on the Advancing Frontiers in Condensed Matter Physics: “Quantum Phases in Electron Systems of Low Dimensions”
Country/Territory	Italy
City	Trieste
Period	26/07/99 → 29/07/99

Cite this

Path-integral approach to the electron density of states at the interface of a single modulation-doped heterojunction. / Slavcheva, G; Sayakanit, Virulh.
1999. Paper presented at The First Stig Lundquist Research Conference on the Advancing Frontiers in Condensed Matter Physics: “Quantum Phases in Electron Systems of Low Dimensions”, Trieste, Italy.

Research output: Contribution to conference › Paper › peer-review

Slavcheva, G & Sayakanit, V 1999, 'Path-integral approach to the electron density of states at the interface of a single modulation-doped heterojunction', Paper presented at The First Stig Lundquist Research Conference on the Advancing Frontiers in Condensed Matter Physics: “Quantum Phases in Electron Systems of Low Dimensions”, Trieste, Italy, 26/07/99 - 29/07/99.

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T2 - The First Stig Lundquist Research Conference on the Advancing Frontiers in Condensed Matter Physics: “Quantum Phases in Electron Systems of Low Dimensions”

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