Path-integral approach to the DOS at the interface of a single modulation-doped heterojunction

G Slavcheva

Research output: Contribution to conferencePaper

Original languageEnglish
Publication statusPublished - 1998
Event50th SUSSP & NATO ASI, Semiconductor Quantum Optoelectronics: From Quantum Physics to Smart Devices - Scotland, St Andrews, UK United Kingdom
Duration: 12 Jun 19984 Jul 1998

Conference

Conference50th SUSSP & NATO ASI, Semiconductor Quantum Optoelectronics: From Quantum Physics to Smart Devices
CountryUK United Kingdom
CitySt Andrews
Period12/06/984/07/98

Cite this

Slavcheva, G. (1998). Path-integral approach to the DOS at the interface of a single modulation-doped heterojunction. Paper presented at 50th SUSSP & NATO ASI, Semiconductor Quantum Optoelectronics: From Quantum Physics to Smart Devices, St Andrews, UK United Kingdom.

Path-integral approach to the DOS at the interface of a single modulation-doped heterojunction. / Slavcheva, G.

1998. Paper presented at 50th SUSSP & NATO ASI, Semiconductor Quantum Optoelectronics: From Quantum Physics to Smart Devices, St Andrews, UK United Kingdom.

Research output: Contribution to conferencePaper

Slavcheva, G 1998, 'Path-integral approach to the DOS at the interface of a single modulation-doped heterojunction', Paper presented at 50th SUSSP & NATO ASI, Semiconductor Quantum Optoelectronics: From Quantum Physics to Smart Devices, St Andrews, UK United Kingdom, 12/06/98 - 4/07/98.
Slavcheva G. Path-integral approach to the DOS at the interface of a single modulation-doped heterojunction. 1998. Paper presented at 50th SUSSP & NATO ASI, Semiconductor Quantum Optoelectronics: From Quantum Physics to Smart Devices, St Andrews, UK United Kingdom.
Slavcheva, G. / Path-integral approach to the DOS at the interface of a single modulation-doped heterojunction. Paper presented at 50th SUSSP & NATO ASI, Semiconductor Quantum Optoelectronics: From Quantum Physics to Smart Devices, St Andrews, UK United Kingdom.
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