Original language | English |
---|---|

Title of host publication | Proceedings of the Sixth International Conference on Path Integrals from peV to TeV : 50 years after Feynman's paper : Florence, Italy, 25-29 August, 1998 |

Editors | R Casalbuoni, R Giachetti, V. Tognetti, Ruggiero Vaia, P Verucchi |

Place of Publication | Singapore |

Publisher | World Scientific |

Publication status | Published - 1999 |

### Cite this

Slavcheva, G. (1999). Path-integral approach to the band-tail density of states in GaAs-AlxGa1-xAs heterojunctions. In R. Casalbuoni, R. Giachetti, V. Tognetti, R. Vaia, & P. Verucchi (Eds.),

*Proceedings of the Sixth International Conference on Path Integrals from peV to TeV : 50 years after Feynman's paper : Florence, Italy, 25-29 August, 1998*Singapore: World Scientific.**Path-integral approach to the band-tail density of states in GaAs-AlxGa1-xAs heterojunctions.** / Slavcheva, G.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Slavcheva, G 1999, Path-integral approach to the band-tail density of states in GaAs-AlxGa1-xAs heterojunctions. in R Casalbuoni, R Giachetti, V Tognetti, R Vaia & P Verucchi (eds),

*Proceedings of the Sixth International Conference on Path Integrals from peV to TeV : 50 years after Feynman's paper : Florence, Italy, 25-29 August, 1998.*World Scientific, Singapore.Slavcheva G. Path-integral approach to the band-tail density of states in GaAs-AlxGa1-xAs heterojunctions. In Casalbuoni R, Giachetti R, Tognetti V, Vaia R, Verucchi P, editors, Proceedings of the Sixth International Conference on Path Integrals from peV to TeV : 50 years after Feynman's paper : Florence, Italy, 25-29 August, 1998. Singapore: World Scientific. 1999

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