Path-integral approach to the band-tail density of states in GaAs-AlxGa1-xAs heterojunctions

G Slavcheva

Path-integral approach to the band-tail density of states in GaAs-AlxGa1-xAs heterojunctions

G Slavcheva

Department of Physics

Research output: Chapter or section in a book/report/conference proceeding › Chapter or section

Original language	English
Title of host publication	Proceedings of the Sixth International Conference on Path Integrals from peV to TeV : 50 years after Feynman's paper : Florence, Italy, 25-29 August, 1998
Editors	R Casalbuoni, R Giachetti, V. Tognetti, Ruggiero Vaia, P Verucchi
Place of Publication	Singapore
Publisher	World Scientific
Publication status	Published - 1999

Cite this

Path-integral approach to the band-tail density of states in GaAs-AlxGa1-xAs heterojunctions. / Slavcheva, G.
Proceedings of the Sixth International Conference on Path Integrals from peV to TeV : 50 years after Feynman's paper : Florence, Italy, 25-29 August, 1998. ed. / R Casalbuoni; R Giachetti; V. Tognetti; Ruggiero Vaia; P Verucchi. Singapore: World Scientific, 1999.

Research output: Chapter or section in a book/report/conference proceeding › Chapter or section

Slavcheva, G. / Path-integral approach to the band-tail density of states in GaAs-AlxGa1-xAs heterojunctions. Proceedings of the Sixth International Conference on Path Integrals from peV to TeV : 50 years after Feynman's paper : Florence, Italy, 25-29 August, 1998. editor / R Casalbuoni ; R Giachetti ; V. Tognetti ; Ruggiero Vaia ; P Verucchi. Singapore : World Scientific, 1999.

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year = "1999",

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BT - Proceedings of the Sixth International Conference on Path Integrals from peV to TeV : 50 years after Feynman's paper : Florence, Italy, 25-29 August, 1998

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