Skip to main navigation Skip to search Skip to main content

Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

  • V. F. Olle
  • , A. Wonfor
  • , L. A.M. Sulmoni
  • , P. P. Vasil'Ev
  • , J. M. Lamy
  • , J. F. Carlin
  • , N. Grandjean
  • , R. V. Penty
  • , I. H. White
  • University of Cambridge
  • Ecole Polytechnique Fédérale de Lausanne
  • Russian Academy of Sciences

Research output: Chapter or section in a book/report/conference proceedingChapter in a published conference proceeding

Abstract

We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
Subtitle of host publicationScience and Innovations
Place of PublicationPiscataway, U. S. A.
PublisherIEEE
ISBN (Print)9781557529725
Publication statusPublished - 14 Jun 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, USA United States
Duration: 9 Jun 201314 Jun 2013

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/TerritoryUSA United States
CitySan Jose, CA
Period9/06/1314/06/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode'. Together they form a unique fingerprint.

Cite this