Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

V. F. Olle, A. Wonfor, L. A.M. Sulmoni, P. P. Vasil'Ev, J. M. Lamy, J. F. Carlin, N. Grandjean, R. V. Penty, I. H. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
Subtitle of host publicationScience and Innovations
Place of PublicationPiscataway, U. S. A.
PublisherIEEE
ISBN (Print)9781557529725
Publication statusPublished - 14 Jun 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, USA United States
Duration: 9 Jun 201314 Jun 2013

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUSA United States
CitySan Jose, CA
Period9/06/1314/06/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Olle, V. F., Wonfor, A., Sulmoni, L. A. M., Vasil'Ev, P. P., Lamy, J. M., Carlin, J. F., Grandjean, N., Penty, R. V., & White, I. H. (2013). Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013: Science and Innovations [6833659] (CLEO: Science and Innovations, CLEO_SI 2013). IEEE.