Oxygen-related vacancy-type defects in ion-implanted silicon

X D Pi, C P Burrows, P G Coleman, R M Gwilliam, B J Sealy

Research output: Contribution to journal › Article › peer-review

8 Citations (SciVal)

Original language	English
Pages (from-to)	S2825-S2833
Journal	Journal of Physics-Condensed Matter
Volume	15
Issue number	39
Publication status	Published - 2003

ID number: ISI:000186283200008

Cite this

@article{88767ab77fd5476d8d392258ec43e58e,

title = "Oxygen-related vacancy-type defects in ion-implanted silicon",

author = "Pi, \{X D\} and Burrows, \{C P\} and Coleman, \{P G\} and Gwilliam, \{R M\} and Sealy, \{B J\}",

note = "ID number: ISI:000186283200008",

year = "2003",

language = "English",

volume = "15",

pages = "S2825--S2833",

journal = "Journal of Physics-Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing",

number = "39",

}

TY - JOUR

T1 - Oxygen-related vacancy-type defects in ion-implanted silicon

AU - Pi, X D

AU - Burrows, C P

AU - Coleman, P G

AU - Gwilliam, R M

AU - Sealy, B J

N1 - ID number: ISI:000186283200008

PY - 2003

Y1 - 2003

UR - https://www.scopus.com/pages/publications/0142060165

M3 - Article

SN - 0953-8984

VL - 15

SP - S2825-S2833

JO - Journal of Physics-Condensed Matter

JF - Journal of Physics-Condensed Matter

IS - 39

ER -