Oxygen-related vacancy-type defects in ion-implanted silicon

X D Pi, C P Burrows, P G Coleman, R M Gwilliam, B J Sealy

Research output: Contribution to journalArticle

8 Citations (Scopus)
Original languageEnglish
Pages (from-to)S2825-S2833
JournalJournal of Physics-Condensed Matter
Volume15
Issue number39
Publication statusPublished - 2003

Cite this

Pi, X. D., Burrows, C. P., Coleman, P. G., Gwilliam, R. M., & Sealy, B. J. (2003). Oxygen-related vacancy-type defects in ion-implanted silicon. Journal of Physics-Condensed Matter, 15(39), S2825-S2833.