Oxygen-related vacancy-type defects in ion-implanted silicon

X D Pi, C P Burrows, P G Coleman, R M Gwilliam, B J Sealy

Research output: Contribution to journal › Article › peer-review

8 Citations (SciVal)

Original language	English
Pages (from-to)	S2825-S2833
Journal	Journal of Physics-Condensed Matter
Volume	15
Issue number	39
Publication status	Published - 2003

ID number: ISI:000186283200008

Cite this

@article{88767ab77fd5476d8d392258ec43e58e,

title = "Oxygen-related vacancy-type defects in ion-implanted silicon",

author = "Pi, {X D} and Burrows, {C P} and Coleman, {P G} and Gwilliam, {R M} and Sealy, {B J}",

note = "ID number: ISI:000186283200008",

year = "2003",

language = "English",

volume = "15",

pages = "S2825--S2833",

journal = "Journal of Physics-Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing",

number = "39",

}