Origin of the drain current bistability in polymer ferroelectric field-effect transistors

R. C.G. Naber; J. Massolt; M. Spijkman; K. Asadi; P. W.M. Blom; D. M. De Leeuw

doi:10.1063/1.2713856

Origin of the drain current bistability in polymer ferroelectric field-effect transistors

R. C.G. Naber, J. Massolt, M. Spijkman, K. Asadi, P. W.M. Blom, D. M. De Leeuw

Department of Physics

Research output: Contribution to journal › Article › peer-review

79 Citations (SciVal)

Abstract

The authors present measurements that elucidate the mechanism behind the observed drain current bistability in ferroelectric field-effect transistors based on the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) as the gate dielectric. Capacitance-voltage measurements on metal-insulator- semiconductor diodes demonstrate that the bistability originates from switching between two states in which the ferroelectric gate dielectric is either polarized or depolarized. Pulsed charge displacement measurements on these diodes enable a direct measurement of the accumulated charge in the polarized state of 40±3 mC m2.

Original language	English
Article number	113509
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2713856
Publication status	Published - 2007

Funding

The authors thank B. de Boer for the purification of regioregular P3HT and acknowledge financial support by the Dutch Science Foundation NWO/FOM and the EC (Project No. PolyApply IST-IP-507143).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2713856

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AB - The authors present measurements that elucidate the mechanism behind the observed drain current bistability in ferroelectric field-effect transistors based on the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) as the gate dielectric. Capacitance-voltage measurements on metal-insulator- semiconductor diodes demonstrate that the bistability originates from switching between two states in which the ferroelectric gate dielectric is either polarized or depolarized. Pulsed charge displacement measurements on these diodes enable a direct measurement of the accumulated charge in the polarized state of 40±3 mC m2.

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Origin of the drain current bistability in polymer ferroelectric field-effect transistors

Abstract

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