Abstract
Ternary oxides formed from zinc and indium have demonstrated potential for commercial optoelectronic applications. We present state-of-the-art hybrid density functional theory calculations for Zn-poor and Zn-rich compositions of the crystalline In(2)O(3)(ZnO)(n) compounds. We reveal the origin of the redshift in optical transitions compared to the two component oxides: symmetry forbidden band-edge transitions in In(2)O(3) are overcome on formation of the superlattices, with Zn-O contributions to the top of the valence band. Increasing n results in the localization of the conduction-band minimum on the In-O networks. This enhanced localization explains why Zn-poor compounds (lower n) exhibit optimal conductivity.
Original language | English |
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Article number | 073105 |
Journal | Physical Review B |
Volume | 79 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- wide band
- wave basis-set
- valence bands
- density functional theory
- red shift
- total-energy calculations
- indium compounds
- zinc compounds
- zno
- conduction bands
- in2o3
- thin-films
- semiconductors
- optical constants
- II-VI semiconductors
- gap semiconductors