Organic nonvolatile memory devices based on ferroelectricity

Ronald C.G. Naber, Kamal Asadi, Paul W.M. Blom, Dago M. De Leeuw, Bert De Boer

Research output: Contribution to journalReview articlepeer-review

487 Citations (SciVal)


A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

Original languageEnglish
Pages (from-to)933-945
Number of pages13
JournalAdvanced Materials
Issue number9
Publication statusPublished - 5 Mar 2010

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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