Organic nonvolatile memory devices based on ferroelectricity

Ronald C.G. Naber; Kamal Asadi; Paul W.M. Blom; Dago M. De Leeuw; Bert De Boer

doi:10.1002/adma.200900759

Organic nonvolatile memory devices based on ferroelectricity

Ronald C.G. Naber, Kamal Asadi, Paul W.M. Blom, Dago M. De Leeuw, Bert De Boer

Department of Physics

Research output: Contribution to journal › Review article › peer-review

516 Citations (SciVal)

Abstract

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

Original language	English
Pages (from-to)	933-945
Number of pages	13
Journal	Advanced Materials
Volume	22
Issue number	9
DOIs	https://doi.org/10.1002/adma.200900759
Publication status	Published - 5 Mar 2010

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.200900759

Cite this

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AU - Asadi, Kamal

AU - Blom, Paul W.M.

AU - De Leeuw, Dago M.

AU - De Boer, Bert

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Organic nonvolatile memory devices based on ferroelectricity

Abstract

ASJC Scopus subject areas

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